Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs[sup +] secondary ion mass spectrometry

2007 ◽  
Vol 25 (1) ◽  
pp. 277 ◽  
Author(s):  
A. R. Chanbasha ◽  
A. T. S. Wee
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Resolution ◽  
Ultralow Energy ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements

2019 ◽  
Vol 25 (2) ◽  
pp. 517-523
Author(s):  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Lee Chow
Keyword(s):  
Mass Spectrometry ◽  
Atom Probe Tomography ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Resolution ◽  
Atom Probe ◽  
Atomic Diffusion ◽  
Advantages And Disadvantages ◽  
Ion Mass Spectrometry ◽  
Long Time ◽  
Secondary Ion

AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.

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