Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes

2007 ◽  
Vol 25 (1) ◽  
pp. 43 ◽  
Author(s):  
Chun-Yuan Huang ◽  
Shih-Yen Lin ◽  
Shiau-Shin Cheng ◽  
Shu-Ting Chou ◽  
Chuan-Yi Yang ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Schottky Diodes ◽  
Organic Layer ◽  
Transport Mechanisms

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

2014 ◽  
Vol 31 (5) ◽  
pp. 057303 ◽  
Author(s):  
Xiao-Feng Wang ◽  
Zhen-Guang Shao ◽  
Dun-Jun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Forward Current

scholarly journals Active Layer Stratigraphy and Organic Layer Thickness at a Thermokarst Site in Arctic Alaska Identified Using Ground Penetrating Radar

2015 ◽  
Vol 47 (2) ◽  
pp. 195-202 ◽  
Author(s):  
Alessio Gusmeroli ◽  
Lin Liu ◽  
Kevin Schaefer ◽  
Tingjun Zhang ◽  
Timothy Schaefer ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Active Layer ◽  
Ground Penetrating Radar ◽  
Organic Layer ◽  
Arctic Alaska ◽  
Ground Penetrating

Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.W. Choi ◽  
C.R. Wie ◽  
S.M. Vernon
Keyword(s):  
Layer Thickness ◽  
Full Width Half Maximum ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Tunneling Current ◽  
Field Range ◽  
Rocking Curve ◽  
Fermi Level Pinning ◽  
Gaas Structure ◽  
Epilayer Surface

AbstractStructural and electrical characteristics of the GaAs1-xPx / GaAs and GaAs/GaAs1-xPx/GaAs (x=0.02, 0.05, 0.08, 0.16 and 0.32) hetero-epitaxial systems have been investigated using X-ray rocking curve technique, Optical Beam Induced Current imaging, Nomarski Micrograph, and I-V-T and C-V measurements. The rocking curve Full Width Half Maximum of the GaAs1-xPx epilayer increased sharply at x=0.16 due to a decreased layer thickness and increased in-plane mismatch. The cross-hatched line density in the OBIC image and Nomarski Micrograph increases as the lattice mismatch increases. The epilayer surface morphology is dependent on the layer thickness. The forward I-V characteristics of Au-GaAsP/GaAs and Au-GaAs/GaAsP/GaAs Schottky diodes showed an increased tunneling current for an the increased lattice mismatch. For GaAsP/GaAs structure with a higher phosphorus composition, Fermi-level pinning caused by misfit dislocation was observed. Au-GaAs/GaAsP/GaAs Schottky diodes show an excess current at the low temperature, high field range which, we believe, is due to defect related tunneling.

scholarly journals Effect of Organic Layer Thickness on Black Spruce Aging Mistakes in Canadian Boreal Forests

Forests ◽  
2016 ◽  
Vol 7 (12) ◽  
pp. 69 ◽  
Author(s):  
Ahmed Laamrani ◽  
Annie DesRochers ◽  
Line Blackburn
Keyword(s):  
Layer Thickness ◽  
Boreal Forests ◽  
Black Spruce ◽  
Organic Layer
Sign in / Sign up

Export Citation Format

Share Document