Energy conversion from catalytic reaction to hot electron current with metal-semiconductor Schottky nanodiodes

2006 ◽  
Vol 24 (4) ◽  
pp. 1967 ◽  
Author(s):  
Jeong Young Park ◽  
Gabor A. Somorjai
Keyword(s):  
Energy Conversion ◽  
Catalytic Reaction ◽  
Hot Electron ◽  
Electron Current

scholarly journals Solar energy conversion via hot electron internal photoemission in metallic nanostructures: Efficiency estimates

2014 ◽  
Vol 115 (13) ◽  
pp. 134301 ◽  
Author(s):  
Andrew J. Leenheer ◽  
Prineha Narang ◽  
Nathan S. Lewis ◽  
Harry A. Atwater
Keyword(s):  
Solar Energy ◽  
Energy Conversion ◽  
Solar Energy Conversion ◽  
Metallic Nanostructures ◽  
Hot Electron ◽  
Internal Photoemission

Solid-State and Vacuum Thermionic Energy Conversion

2005 ◽  
Vol 886 ◽  
Author(s):  
Ali Shakouri ◽  
Z. Bian ◽  
R. Singh ◽  
Y. Zhang ◽  
D. Vashaee ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Solid State ◽  
Energy Conversion ◽  
Thermionic Emission ◽  
Hot Electron ◽  
Research Activities ◽  
Solid State Devices ◽  
Thermionic Energy Conversion ◽  
Thermionic Energy

ABSTRACTA brief overview of the research activities at the Thermionic Energy Conversion (TEC) Center is given. The goal is to achieve direct thermal to electric energy conversion with >20% efficiency and >1W/cm2 power density at a hot side temperature of 300–650C. Thermionic emission in both vacuum and solid-state devices is investigated. In the case of solid-state devices, hot electron filtering using heterostructure barriers is used to increase the thermoelectric power factor. In order to study electron transport above the barriers and lateral momentum conservation in thermionic emission process, the current-voltage characteristic of ballistic transistor structures is investigated. Embedded ErAs nanoparticles and metal/semiconductor multilayers are used to reduce the lattice thermal conductivity. Cross-plane thermoelectric properties and the effective ZT of the thin film are analyzed using the transient Harman technique. Integrated circuit fabrication techniques are used to transfer the n- and p-type thin films on AlN substrates and make power generation modules with hundreds of thin film elements. For vacuum devices, nitrogen-doped diamond and carbon nanotubes are studied for emitters. Sb-doped highly oriented diamond and low electron affinity AlGaN are investigated for collectors. Work functions below 1.6eV and vacuum thermionic power generation at temperatures below 700C have been demonstrated.

ChemInform Abstract: Hot Electron and Surface Plasmon-Driven Catalytic Reaction in Metal-Semiconductor Nanostructures

ChemInform ◽  
2015 ◽  
Vol 46 (5) ◽  
pp. no-no
Author(s):  
Jeong Young Park ◽  
Sun Mi Kim ◽  
Hyosun Lee ◽  
Brundabana Naik
Keyword(s):  
Surface Plasmon ◽  
Catalytic Reaction ◽  
Semiconductor Nanostructures ◽  
Hot Electron
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