Influence of silicon nitride passivation on transport properties in InAlAs∕InGaAs∕InP composite channel high electron mobility transistor structures

2006 ◽  
Vol 24 (4) ◽  
pp. 1711
Author(s):  
Yuwei Liu ◽  
Hong Wang
Keyword(s):  
Silicon Nitride ◽  
Transport Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel

scholarly journals A new small signal physical model of InP-based composite channel high electron mobility transistor

2006 ◽  
Vol 55 (7) ◽  
pp. 3617
Author(s):  
Li Xiao ◽  
Liu Liang ◽  
Zhang Hai-Ying ◽  
Yin Jun-Jian ◽  
Li Hai-Ou ◽  
...  
Keyword(s):  
Physical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Composite Channel

Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor

2005 ◽  
Vol 44 (8) ◽  
pp. 5903-5908 ◽  
Author(s):  
Yeong-Jia Chen ◽  
Ching-Sung Lee ◽  
Tzong-Bin Wang ◽  
Wei-Chou Hsu ◽  
Yen-Wei Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel

Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L871-L872 ◽  
Author(s):  
Edward Yi Chang ◽  
Yueh-Chin Lin ◽  
Guan-Ji Chen ◽  
Huang-Ming Lee ◽  
Guo-Wei Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
High Linearity

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

2013 ◽  
Vol 805-806 ◽  
pp. 1027-1030 ◽  
Author(s):  
Da Qing Peng ◽  
Xun Dong ◽  
Zhong Hui Li ◽  
Dong Guo Zhang ◽  
Liang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
2Deg Density

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm2/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.

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