Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

2006 ◽  
Vol 24 (4) ◽  
pp. 1431-1440 ◽  
Author(s):  
Yoshinori Momonoi ◽  
Kazumasa Yonekura ◽  
Masaru Izawa
Keyword(s):  
2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


Author(s):  
Osama Hussein ◽  
Khair Al Shamaileh ◽  
Hjalti Sigmarsson ◽  
Said Abushamleh ◽  
Nafati Aboserwal ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.


Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2614
Author(s):  
Qian Yang ◽  
Shuangyang Liu ◽  
Hongyu Shi ◽  
Kai-Da Xu ◽  
Xinyue Dai ◽  
...  

A corrugated disk resonator with eight grooves is proposed for wideband bandpass filter (BPF) design. Due to the spoof localized surface plasmons resonances of the corrugated metallic structure, the dipole, quadrupole, hexapole modes, and a fundamental mode excited by the introduced short-circuited via holes are employed to realize four transmission poles (TPs) in the passband. The theoretical analysis is described by the electric field and current distributions on the resonator. The resonant frequencies can be tuned easily by the parameters of the structure, which can be used to adjust the center frequency and bandwidth of the BPF freely. Furthermore, two resonators are cascaded to obtain eight TPs to improve the selectivity performance. Finally, three fabricated filters demonstrate the design method.


Author(s):  
Niklas Rorsman ◽  
Mikael Garcia ◽  
Christer Karlsson ◽  
Herbert Zirath
Keyword(s):  

1997 ◽  
Vol 109-110 ◽  
pp. 201-205 ◽  
Author(s):  
S.I. Dolgaev ◽  
A.A. Lyalin ◽  
A.V. Simakin ◽  
V.V. Voronov ◽  
G.A. Shafeev

2011 ◽  
Author(s):  
Dan Vasilache ◽  
Sabrina Colpo ◽  
Flavio Giacomozzi ◽  
Sabina Ronchin ◽  
Abdul Qader Ahsan Qureshi ◽  
...  
Keyword(s):  

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