Low-voltage resistive switching of polycrystalline SrZrO3:Cr thin films grown on Si substrates by off-axis rf sputtering

2006 ◽  
Vol 24 (4) ◽  
pp. 970-973 ◽  
Author(s):  
Jae-Wan Park ◽  
Jong-Wan Park ◽  
Min Kyu Yang ◽  
Kyooho Jung ◽  
Dal-Young Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Low Voltage ◽  
Rf Sputtering ◽  
Si Substrates

Diverse resistive switching behaviors of AlN thin films with different orientations

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6230-6235 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Huei-Yu Liou ◽  
Sheng-Yuan Chu ◽  
Chih-Yu Huang ◽  
Cheng-Shong Hong
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Radio Frequency ◽  
Resistive Switching ◽  
Rf Sputtering ◽  
Si Substrates

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method.

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Microelectromechanical Systems ◽  
Low Voltage ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Si Substrates ◽  
The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250137 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
L. S. CHUAH ◽  
M. A. AHMAD ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Indium Nitride ◽  
Rf Sputtering ◽  
Nitrogen Gas ◽  
Si Substrates ◽  
Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

scholarly journals Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

2011 ◽  
Vol 110 (2) ◽  
pp. 024114 ◽  
Author(s):  
C. Ostos ◽  
O. Raymond ◽  
N. Suarez-Almodovar ◽  
D. Bueno-Baqués ◽  
L. Mestres ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Co Doped

Multiferroic and resistive switching behaviors in BiFe0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

2013 ◽  
Vol 113 (3) ◽  
pp. 779-785
Author(s):  
B. C. Luo ◽  
J. Wang ◽  
X. S. Cao ◽  
K. X. Jin ◽  
C. L. Chen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Si Substrates

Effects of Deposition Parameters and Annealing Temperatures on the Characteristics of the Sr0.6Ba0.4Nb2O6 Thin Films

2011 ◽  
Vol 415-417 ◽  
pp. 1867-1870 ◽  
Author(s):  
Chao Chin Chan ◽  
Yuan Tai Hsieh ◽  
Cheng Yi Chen ◽  
Wen Cheng Tzou ◽  
Chia Ching Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Concentration ◽  
Rf Sputtering ◽  
Chamber Pressure ◽  
Rf Power ◽  
Electrical Field ◽  
Si Substrates ◽  
Deposition Parameters ◽  
Capacitance Voltage ◽  
Rapid Temperature

Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio frequency (RF) sputtering onto the SiO2/Si/Al and Pt/Ti/Si substrates to form the MFIS and MFM structures. Their deposition rates increased with decreasing oxygen concentration and with increasing RF power. Their optimal deposition parameters were the substrate temperature of 500°C, chamber pressure of 10 mTorr, oxygen concentration of 40%, and RF power of 120W, respectively. The rapid temperature annealing (RTA) process had large effects on the grain growth of the SBN thin films. The effects of different RTA temperatures on the leakage current density - electrical field curves and the capacitance - voltage curves of the SBN thin films were also investigated.

Characterization of sputtered iridium dioxide thin films

1998 ◽  
Vol 13 (5) ◽  
pp. 1318-1326 ◽  
Author(s):  
P. C. Liao ◽  
W. S. Ho ◽  
Y. S. Huang ◽  
K. K. Tiong
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Iridium Dioxide ◽  
Atomic Force ◽  
Average Grain Size

Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture.

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