Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode
2016 ◽
Vol 34
(4)
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pp. 041602
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2014 ◽
Vol 34
(10)
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pp. 2285-2297
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2019 ◽
Vol 75
(3)
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pp. 442-448