Application of molecular dynamics for low-energy ion implantation in crystalline silicon

2006 ◽  
Vol 24 (1) ◽  
pp. 462 ◽  
Author(s):  
H. Y. Chan ◽  
M. P. Srinivasan ◽  
N. J. Montgomery ◽  
C. P. A. Mulcahy ◽  
S. Biswas ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Implantation ◽  
Crystalline Silicon ◽  
Low Energy

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

scholarly journals Molecular Dynamics Simulations of Nanoparticle-Surface Collisions in Crystalline Silicon

2008 ◽  
Vol 1 ◽  
pp. 31-39 ◽  
Author(s):  
Paolo Valentini ◽  
Traian Dumitrica
Keyword(s):  
Molecular Dynamics ◽  
Phase Transformation ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Coherent Phonon ◽  
Soft Landing ◽  
Microscopic Description ◽  
Nanoparticle Surface ◽  
Deformation Regime ◽  
Dynamics Simulations

We present a microscopic description for the impacting process of silicon nanospheres onto a silicon substrate. In spite of the relatively low energy regime considered (up to 1 eV/atom), the impacting process exhibits a rich behavior: A rigid Hertzian model is valid for speeds below 500 m/s, while a quasi-ellipsoidal deformation regime emerges at larger speeds. Furthermore, for speeds up to 1000 m/s the particle undergoes a soft landing and creates a long-lived coherent surface phonon. Higher speeds lead to a rapid attenuation of the coherent phonon due to a partial diamond cubic to-tin phase transformation occurring in the particle.

Low-energy ion implantation for shallow junction crystalline silicon solar cell

Solar Energy ◽  
2016 ◽  
Vol 130 ◽  
pp. 25-32 ◽  
Author(s):  
Wei-Lin Yang ◽  
Tai-Ying Lin ◽  
Shu-Sheng Lien ◽  
Likarn Wang
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Crystalline Silicon Solar Cell ◽  
Shallow Junction

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

1993 ◽  
Vol 8 (9) ◽  
pp. 2305-2309 ◽  
Author(s):  
Y. Levin ◽  
N. Herbots ◽  
S. Dunham
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Crystal Surface ◽  
Effective Diffusivity ◽  
Low Energy ◽  
Parallel Computer ◽  
Analytic Approximation ◽  
Dose Ratio ◽  
Experimental Conditions ◽  
Diffusion Of Vacancies

In this work, we develop a model describing the diffusion of vacancies and self-interstitials and their recombination during ion implantation. The model includes the effect of the moving surface due to regrowth and the defect generation rate as a function of depth based on Monte Carlo simulations. The results are compared to experimental measurements of the damage-to-dose ratio (DDR) after low energy, 40 eV, silicon ion implantation into silicon at 300 and 685 K. We have derived an analytic approximation which agrees with the results of the computational model, implemented on a CM-2 parallel computer. We find that the calculated effective diffusivity, the main adjustable parameter in the simulations, is much lower than predicted based on extrapolation from experiments at higher temperatures. We attribute this difference to the aggregation of self-interstitials. We also find that the effect of interstitial-vacancy recombination on DDR is negligible under the experimental conditions considered; however, the crystal surface motion has a significant impact on the results.

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