Ohmic contact formation mechanism of Ta∕Al∕Mo∕Au and Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN HEMTs

2005 ◽  
Vol 23 (6) ◽  
pp. 2330 ◽  
Author(s):  
Fitih M. Mohammed ◽  
Liang Wang ◽  
Deepak Selvanathan ◽  
Hubert Hu ◽  
Ilesanmi Adesida
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Gan Hemts ◽  
Ohmic Contact Formation

Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Dae-Woo Kim ◽  
Joon Cheol Bae ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
Chong Cook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Behavior ◽  
Plane Direction ◽  
Ohmic Contact Formation

ABSTRACTWe have investigated surface treatment effect on the interfacial reaction of Pd/p-GaN interface and also room temperature ohmic contact formation mechanism of Pd-based ohmic contact. In order to examine room temperature ohmic behavior, various metal contact systems were deposited and current-voltage measurements were carried out. In spite of large theoretical Schottky barrier height between Pd and p-GaN, Pd-based contact showed perfect ohmic characteristic even before annealing. According to the results of synchrotron X-ray radiation, the closed-packed atomic planes (111) of the Pd film were quite well ordered in surface normal direction as well as in the in-plane direction. The effective Schottky barrier height of Au/Pd/Mg/Pd/p-GaN was 0.47eV, which was estimated by Norde method. This discrepancy between theoretical barrier height and the measured one might be due to the epitaxial growth of Pd contact metal and so the room-temperature ohmic characteristic of Pd-based ohmic contact was related strongly to the in-plane epitaxial quality of metal on p-GaN.

Doping and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems

1992 ◽  
Vol 260 ◽  
Author(s):  
K. Wuyts ◽  
J. Watté ◽  
R. E. Silverans ◽  
H. MüNder ◽  
M. G. Berger ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

ABSTRACTThe results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are presented. The data and those reported in literature on the AuGe- and Ge/Pd- GaAs systems are argued to be more in agreement with the graded crystalline heterojunction concept (the formation of n+-Ge/GaAs, n+Ga2Te3/GaAs junctions) than with the doping model (the formation of n+-GaAs).

Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

1998 ◽  
Vol 83 (12) ◽  
pp. 7715-7719 ◽  
Author(s):  
A. Vogt ◽  
A. Simon ◽  
H. L. Hartnagel ◽  
J. Schikora ◽  
V. Buschmann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C

1996 ◽  
Vol 79 (8) ◽  
pp. 4216 ◽  
Author(s):  
L. C. Wang ◽  
P. H. Hao ◽  
J. Y. Cheng ◽  
F. Deng ◽  
S. S. Lau
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic contact formation mechanism of Ge-doped 6H-SiC

2020 ◽  
Vol 534 ◽  
pp. 125363
Author(s):  
Yutian Wang ◽  
Zuoyi Zhang ◽  
Ke Zhou ◽  
Zeyu Guo ◽  
Ming Lei ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

scholarly journals Ohmic contact formation mechanism of Ni on n-type 4H–SiC

2001 ◽  
Vol 79 (12) ◽  
pp. 1816-1818 ◽  
Author(s):  
Sang Youn Han ◽  
Ki Hong Kim ◽  
Jong Kyu Kim ◽  
Ho Won Jang ◽  
Kwang Ho Lee ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

The ohmic contact formation mechanism in laser beam mixed Au/Te/Au/GaAs structures

1993 ◽  
Vol 69 (1-4) ◽  
pp. 101-107
Author(s):  
J. Watté ◽  
R.E. Silverans ◽  
M. Van Hove ◽  
K. Wuts
Keyword(s):  
Laser Beam ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Effect of Argon Plasma Treatment on Ohmic Contact Formation in AlGaN/GaN HEMTs

2019 ◽  
pp. 191-198
Author(s):  
Sonalee Kapoor ◽  
Robert Laishram ◽  
Hemant Saini ◽  
Somna Mahajan ◽  
Rupesh Kumar Chaubey ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Ohmic Contact ◽  
Argon Plasma ◽  
Contact Formation ◽  
Gan Hemts ◽  
Ohmic Contact Formation
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