Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

2005 ◽  
Vol 23 (6) ◽  
pp. 1633-1637 ◽  
Author(s):  
J. Sun ◽  
A. M. Wu ◽  
N. Xu ◽  
Z. F. Ying ◽  
X. K. Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Low Temperature ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Resonance Plasma

Electron Cyclotron Resonance Plasma-assisted Reactive Pulsed Laser Deposition of Compound Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1692-1697 ◽  
Author(s):  
J. Sun ◽  
J. D. Wu ◽  
H. Ling ◽  
W. Shi ◽  
Z. F. Ying ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Pulsed Laser ◽  
Electron Cyclotron ◽  
Laser Deposition ◽  
Electron Cyclotron Resonance Plasma ◽  
Low Temperature Preparation ◽  
Resonance Plasma

A novel method was developed for low-temperature preparation of thin films. Pulsed laser ablation was combined with electron cyclotron resonance microwave discharge, constituting a novel hybrid film preparation method called electron cyclotron resonance plasma–assisted reactive pulsed laser deposition. We demonstrated the feasibility of the method by preparing compound films of silicon nitride, silicon dioxide, and aluminum nitride from elemental starting materials. The mechanisms responsible for efficient compound formation and film growth are discussed, together with characterization of the prepared films, analysis of the plasma composition, and comparison of the films prepared with and without assistance of the plasma. The unique features of the method make it suitable for one-step preparation of compound thin films at low temperatures.

Sign in / Sign up

Export Citation Format

Share Document