Fabrication of a Si∕SiO[sub 2] multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition

Author(s):  
R. Rölver ◽  
S. Brüninghoff ◽  
M. Först ◽  
B. Spangenberg ◽  
H. Kurz
2011 ◽  
Vol 306-307 ◽  
pp. 1133-1137
Author(s):  
Ting Wei Kuo ◽  
Ling Min Kong ◽  
Zhe Chuan Feng ◽  
Wei Liu ◽  
Soo Jin Chua ◽  
...  

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), were studied by time-resolved photoluminescence (TRPL) spectroscopic technique. Samples involved have similar basic structures of three QWs but different well-composition and barrier/well dimensions. TRPL results show that PL intensity and decay time increase with the number of QWs and the indium composition. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN MQW LED, with controlled the indium composition and QW numbers.


2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  

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