Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

2005 ◽  
Vol 23 (4) ◽  
pp. 1215-1220 ◽  
Author(s):  
A. E. Delahoy ◽  
S. Y. Guo
Keyword(s):  
Hollow Cathode ◽  
Film Deposition ◽  
Conducting Film ◽  
Cathode Sputtering

scholarly journals Improvement of Thin Film Adhesion Due to Bombardment by Fast Argon Atoms

Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 303 ◽  
Author(s):  
Sergey Grigoriev ◽  
Alexander Metel ◽  
Marina Volosova ◽  
Yury Melnik
Keyword(s):  
Deposition Rate ◽  
Hollow Cathode ◽  
Film Deposition ◽  
Glow Discharge Plasma ◽  
Cathode Sputtering ◽  
Copper Target ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Emissive Grid ◽  
Argon Ions

A new hollow cathode sputtering system is used for beam-assisted deposition of thin films on dielectric substrates. A copper target placed at the hollow cathode bottom is uniformly sputtered by argon ions from the glow discharge plasma filling the cathode. Through an emissive grid, sputtered copper atoms leave the cathode together with accelerated argon ions. On their way to the substrate, the ions—due to charge exchange collisions—turn into fast argon atoms bombarding the growing film. With increasing argon ion energy, continuous bombardment results in the film adhesion improvement and reduction of the deposition rate down to zero, at an energy of about 2 keV. The pulsed bombardment does not influence the film deposition rate, and results in a monotonic growth of the film adhesion up to 20 MPa when increasing the fast atom energy up to 10 keV.

Hollow cathode discharge for absorber film deposition

2021 ◽  
Author(s):  
Gustavo César Pamplona de Sousa ◽  
Kelly Cristiane Gomes ◽  
Clodomiro Alves Junior
Keyword(s):  
Hollow Cathode ◽  
Film Deposition ◽  
Hollow Cathode Discharge

Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

2005 ◽  
Vol 862 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
J. S. Schrader ◽  
V. L. Dalal
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Hollow Cathode ◽  
Growth Conditions ◽  
Group Iv ◽  
Native Oxide ◽  
Cathode Sputtering ◽  
Si Substrates ◽  
New Material ◽  
Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

Ferroelectric Film Self-Polarization

1994 ◽  
Vol 361 ◽  
Author(s):  
E. Sviridov ◽  
I. Sem ◽  
V. Alyoshih ◽  
S. Biryukov ◽  
V. Dudkevich
Keyword(s):  
Phase Transition ◽  
Curie Point ◽  
Deposition Temperature ◽  
Negative Charge ◽  
Internal Field ◽  
Gas Discharge ◽  
Ferroelectric Film ◽  
Film Deposition ◽  
Cathode Sputtering ◽  
Point Temperature

ABSTRACTIn the present paper three mechanisms of self-polarization of ferroelectric crystals are discussed: polarization by the crystal bending, that by the “organized” Phase transition and that by the internal field. It is shown that these mechanisms operate also in the case of films. However, the using of cathode sputtering leads to the appearance of two new mechanisms: polarization by the field biasing the substrate with respect to the gas discharge at the film deposition temperature Ts below the Curie point temperature Tc (Ts < TO; and polarization by the field captured by the traps of the negative charge having no time to relax for the time of cooling the film to Tc (Ts > Tc).

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

2010 ◽  
Vol 645-648 ◽  
pp. 131-134 ◽  
Author(s):  
James Huguenin-Love ◽  
Noel T. Lauer ◽  
Rodney J. Soukup ◽  
Ned J. Ianno ◽  
Štepan Kment ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Cathode Sputtering

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Optical Emission Spectroscopy Diagnostic of Discharge Plasma in a Hollow-Cathode Sputtering Source

2006 ◽  
Vol 45 (10B) ◽  
pp. 8128-8131 ◽  
Author(s):  
Radu Apetrei ◽  
Dumitru Alexandroaei ◽  
Dumitru Luca ◽  
Petru Balan ◽  
Codrina Ionita ◽  
...  
Keyword(s):  
Hollow Cathode ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Discharge Plasma ◽  
Optical Emission ◽  
Cathode Sputtering
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