Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks

2005 ◽  
Vol 23 (2) ◽  
pp. 534 ◽  
Author(s):  
Tomohiro Kubota ◽  
Tomohiro Baba ◽  
Hiroyuki Kawashima ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
...  
Keyword(s):  
Neutral Beam ◽  
Iron Core ◽  
Ferritin Iron ◽  
Neutral Beam Etching

A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching

2008 ◽  
Vol 1 ◽  
pp. 074002 ◽  
Author(s):  
Seiji Samukawa ◽  
Tomohiro Kubota ◽  
Chi-Hsien Huang ◽  
Takeshi Hashimoto ◽  
Makoto Igarashi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Neutral Beam ◽  
Iron Core ◽  
Quantum Well Structure ◽  
Ferritin Iron ◽  
Neutral Beam Etching

THE FORMATION, STRUCTURE AND DISSOLUTION OF THE FERRITIN IRON CORE STUDIED BY X-RAY ABSORPTION SPECTROSCOPY

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1155-C8-1157
Author(s):  
E. C. THEIL ◽  
D. E. SAYERS ◽  
C. Y. YANG ◽  
A. FONTAINE ◽  
E. DARTYGE
Keyword(s):  
Absorption Spectroscopy ◽  
Iron Core ◽  
X Ray ◽  
Ferritin Iron ◽  
X Ray Absorption

A new fabrication technology of FinFETs using a neutral beam etching

2005 ◽  
Author(s):  
K. Endo ◽  
S. Noda ◽  
T. Ozaki ◽  
S. Samukawa ◽  
M. Masahara ◽  
...  
Keyword(s):  
Neutral Beam ◽  
Fabrication Technology ◽  
Neutral Beam Etching

Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application

2010 ◽  
Vol 49 (4) ◽  
pp. 04DL16 ◽  
Author(s):  
Chi-Hsien Huang ◽  
Makoto Igarashi ◽  
Susumu Horita ◽  
Masaki Takeguchi ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Neutral Beam ◽  
Solar Cell Application ◽  
Si Nanodisk ◽  
Neutral Beam Etching

Reduction of EUV resist damage by neutral beam etching

2021 ◽  
Author(s):  
Gyo Wun Kim ◽  
Won Jun Chang ◽  
Ji Eun Kang ◽  
Hee Ju Kim ◽  
Geun Young Yeom
Keyword(s):  
Radiation Damage ◽  
Light Source ◽  
Ion Beam ◽  
Critical Dimension ◽  
Neutral Beam ◽  
Etch Depth ◽  
Etching Selectivity ◽  
193 Nm ◽  
20 Nm ◽  
Neutral Beam Etching

Abstract Even though EUV lithography has the advantage of implenting a finer pattern compared to ArF immersion lithography due to the use of 13.5 nm instead of 193 nm as the wavelengh of the light source, due to the low energy of EUV light source, EUV resist has a thinner thickness than conventional ArF resist. EUV resist having such a thin thickness is more vulnerable to radiation damage received during the etching because of its low etch resistance and also tends to have a problem of low etch selectivity. In this study, the radiation damage to EUV resist during etching of hardmask materials such as Si3N4, SiO2, etc. using CF4 gas was compared between neutral beam etching (NBE) and ion beam etching (IBE). When NBE was used, after the etching of 20 nm thick EUV resist, the line edge roughness (LER) increase and the critical dimension (CD) change of EUV resist were reduced by ~ 1/3 and ~ 1/2, respectively, compared to those by IBE. Also, at that EUV etch depth, the RMS(root mean square) surface roughness value of EUV resist etched by NBE was ~2/3 compared to that by IBE on the average. It was also confirmed that the etching selectivity between SiO2, Si3N4, etc. and EUV resist was higher for NBE compared to IBE. The less damage to the EUV resist and the higher etch selectivity of materials such as Si3N4 and SiO2 over EUV resist for NBE compared to IBE are believed to be related to the no potential energy released by the neutralization of the ions during the etching for NBE.

Defect-free germanium etching for 3D Fin MOSFET using neutral beam etching

2016 ◽  
Author(s):  
En-Tzu Lee ◽  
Shuichi Noda ◽  
Wataru Mizubayashi ◽  
Kazuhiko Endo ◽  
Seiji Samukawa
Keyword(s):  
Neutral Beam ◽  
Neutral Beam Etching
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