Atomic layer deposition of nickel oxide films using Ni(dmamp)2 and water

2005 ◽  
Vol 23 (4) ◽  
pp. 1238-1243 ◽  
Author(s):  
Taek Seung Yang ◽  
Wontae Cho ◽  
Minchan Kim ◽  
Ki-Seok An ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Nickel Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nickel Oxide Films

scholarly journals Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 907
Author(s):  
Yury Koshtyal ◽  
Ilya Mitrofanov ◽  
Denis Nazarov ◽  
Oleg Medvedev ◽  
Artem Kim ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Atomic Layer Deposition ◽  
Nickel Oxide ◽  
Cobalt Oxide ◽  
Lithium Ion ◽  
Atomic Layer ◽  
Metallic Nickel ◽  
Uniform Density ◽  
Oxide Content ◽  
Layer Deposition

Nanostructured metal oxides (MOs) demonstrate good electrochemical properties and are regarded as promising anode materials for high-performance lithium-ion batteries (LIBs). The capacity of nickel-cobalt oxides-based materials is among the highest for binary transition metals oxide (TMOs). In the present paper, we report the investigation of Ni-Co-O (NCO) thin films obtained by atomic layer deposition (ALD) using nickel and cobalt metallocenes in a combination with oxygen plasma. The formation of NCO films with different ratios of Ni and Co was provided by ALD cycles leading to the formation of nickel oxide (a) and cobalt oxide (b) in one supercycle (linear combination of a and b cycles). The film thickness was set by the number of supercycles. The synthesized films had a uniform chemical composition over the depth with an admixture of metallic nickel and carbon up to 4 at.%. All samples were characterized by a single NixCo1-xO phase with a cubic face-centered lattice and a uniform density. The surface of the NCO films was uniform, with rare inclusions of nanoparticles 15–30 nm in diameter. The growth rates of all films on steel were higher than those on silicon substrates, and this difference increased with increasing cobalt concentration in the films. In this paper, we propose a method for processing cyclic voltammetry curves for revealing the influence of individual components (nickel oxide, cobalt oxide and solid electrolyte interface—SEI) on the electrochemical capacity. The initial capacity of NCO films was augmented with an increase of nickel oxide content.

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Stabilization of Mesoporous Iron Oxide Films against Sintering and Phase Transformations via Atomic Layer Deposition of Alumina and Silica

2018 ◽  
Vol 5 (14) ◽  
pp. 1800360 ◽  
Author(s):  
Katrin Kraffert ◽  
Matthias Karg ◽  
Roman Schmack ◽  
Guylhaine Clavel ◽  
Cedric Boissiere ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Phase Transformations ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Iron Oxide Films

Condensation heat transfer on nickel tubes: The role of atomic layer deposition of nickel oxide

2019 ◽  
Vol 133 ◽  
pp. 487-493 ◽  
Author(s):  
Mohammad Alwazzan ◽  
Karim Egab ◽  
Pengtao Wang ◽  
Zeyu Shang ◽  
Xinhua Liang ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Atomic Layer Deposition ◽  
Nickel Oxide ◽  
Atomic Layer ◽  
Condensation Heat Transfer ◽  
Layer Deposition
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