Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors

2004 ◽  
Vol 22 (6) ◽  
pp. 2635 ◽  
Author(s):  
B. S. Kang ◽  
S. Kim ◽  
J. R. La Roche ◽  
F. Ren ◽  
R. C. Fitch ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Temperature Stability ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 546 ◽  
Author(s):  
Wojciech Wojtasiak ◽  
Marcin Góralczyk ◽  
Daniel Gryglewski ◽  
Marcin Zając ◽  
Robert Kucharski ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Maximum Output ◽  
High Electron ◽  
Output Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Access Resistance

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors

2011 ◽  
Vol 56 (1) ◽  
pp. 56-59
Author(s):  
Martin Kocan ◽  
Felix Recht ◽  
Gilberto A. Umana-Membreno ◽  
Matt R. Kilburn ◽  
Brett D. Nener ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Properties of Ohmic Contacts to Heterojunction Transistors

1990 ◽  
Vol 181 ◽  
Author(s):  
H. Barry Harrison
Keyword(s):  
Physical Properties ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Active Channel ◽  
Heterojunction Transistors

ABSTRACTThe electrical and physical properties of the contact between the active channel of high electron mobility transistors (HEMT’s) and the source or drain contacts play an important role in determining the transistor characteristics. This paper considers electrical models that may be applied to the various techniques now available to form these Interconnections. Results of electrical (and some physical) studies with regard to these systems are then discussed and compared where possible with predictions made using the electrical models. The comparisons show that the electrical models provide a useful base to identify the important parameters in these interconnections.

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

2013 ◽  
Vol 6 (11) ◽  
pp. 116501 ◽  
Author(s):  
Yang Li ◽  
Geok Ing Ng ◽  
Subramaniam Arulkumaran ◽  
Chandra Mohan Manoj Kumar ◽  
Kian Siong Ang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

1991 ◽  
Vol 240 ◽  
Author(s):  
P. F. Tang ◽  
M. S. Fan ◽  
A. A. Illiadis
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Temperature Stability ◽  
High Electron Mobility Transistors ◽  
Input Power ◽  
Junction Temperature ◽  
High Electron ◽  
High Temperature Stability ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

ABSTRACTThe enhanced high temperature gate metallizations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperatures in excess of 250°C. The TiWN/Au system resulted in a sheet resistance of only 11.5 mΩ/□ while TiWSi/Au resulted in 75.0 mΩ/□. The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160 -180 mS/mm at temperatures of 300°C. Thermal analysis indicated the peak junction temperature increase with an input power of 200mW to be less than 18°C at substrate temperature of 60°C.

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