scholarly journals Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl2[N(SiMe3)2]2 and H2O

2004 ◽  
Vol 22 (6) ◽  
pp. 2392-2397 ◽  
Author(s):  
Sang-Woo Kang ◽  
Shi-Woo Rhee ◽  
Steven M. George
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Atomic Layer ◽  
Infrared Spectroscopic Study ◽  
Deposition Mechanism ◽  
Hafnium Silicate ◽  
Layer Deposition ◽  
Infrared Spectroscopic

Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

2009 ◽  
Vol 156 (8) ◽  
pp. G89 ◽  
Author(s):  
Jian Liu ◽  
William N. Lennard ◽  
Lyudmila V. Goncharova ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hafnium Silicate ◽  
Layer Deposition

Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone

2004 ◽  
Vol 22 (4) ◽  
pp. 1175-1181 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Seung Park ◽  
Hood Chatham ◽  
Lawrence Bartholomew ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Hafnium Silicate ◽  
Liquid Precursors ◽  
Layer Deposition

In Situ Infrared Spectroscopic Study of Atomic Layer-Deposited TiO2 Thin Films by Nonaqueous Routes

2013 ◽  
Vol 25 (9) ◽  
pp. 1706-1712 ◽  
Author(s):  
Karla Bernal Ramos ◽  
Guylhaine Clavel ◽  
Catherine Marichy ◽  
Wilfredo Cabrera ◽  
Nicola Pinna ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Atomic Layer ◽  
Infrared Spectroscopic Study ◽  
Tio2 Thin Films ◽  
Infrared Spectroscopic

Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

2020 ◽  
Vol 46 (8) ◽  
pp. 10121-10129
Author(s):  
Jae-Hwan Kim ◽  
Tran Thi Ngoc Van ◽  
Jiwon Oh ◽  
Seung-Muk Bae ◽  
Sang Ick Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Single Source ◽  
Hafnium Silicate ◽  
Layer Deposition ◽  
Single Source Precursor

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Sign in / Sign up

Export Citation Format

Share Document