Improved surface morphology in GaN homoepitaxy by NH[sub 3]-source molecular-beam epitaxy

2004 ◽  
Vol 22 (4) ◽  
pp. 2158 ◽  
Author(s):  
T. Koida ◽  
Y. Uchinuma ◽  
J. Kikuchi ◽  
K. R. Wang ◽  
M. Terazaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

scholarly journals Roughening in Nonlinear Surface Growth Model

2020 ◽  
Vol 10 (4) ◽  
pp. 1422 ◽  
Author(s):  
Gabriella Bognár
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Film Growth ◽  
Nonlinear Differential Equations ◽  
Numerical Approach ◽  
Surface Roughening ◽  
Time Interval ◽  
Nonlinear Surface ◽  
Over Time

The aim of this paper is to examine the coarsening process in the evolution of the surface morphology during molecular beam epitaxy (MBE). A numerical approach for modeling the evolution of surface roughening in film growth by MBE is proposed. The model is based on the nonlinear differential equations by Kuramoto–Sivashinsky (KS) namely, KS and CKS (conserved KS). In particular, we propose a “combined version” of KS and CKS equations, which is solved as a function of a parameter r for the 1 + 1 dimensional case. The computation provides film height as a function of space and time. From this quantity the change of the width of the film over time has numerically been studied as a function of r. The main result of the research is that the surface width is exponentially increasing with increasing time and the change in surface width for smaller r values is significantly greater over longer time interval.

An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy

2020 ◽  
Vol 46 (6) ◽  
pp. 543-547
Author(s):  
A. V. Myasoedov ◽  
D. V. Nechaev ◽  
V. V. Ratnikov ◽  
A. E. Kalmykov ◽  
L. M. Sorokin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Filtering Efficiency

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

2008 ◽  
Vol 103 (12) ◽  
pp. 123530 ◽  
Author(s):  
B. Cho ◽  
J. Bareño ◽  
Y. L. Foo ◽  
S. Hong ◽  
T. Spila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source

Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates

1996 ◽  
Vol 69 (3) ◽  
pp. 394-396 ◽  
Author(s):  
M. F. Fyhn ◽  
S. Yu. Shiryaev ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Tin Alloys

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

2011 ◽  
Vol 1315 ◽  
Author(s):  
H.Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
M.A. Reshchikov ◽  
S. Wolgast ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Growth Conditions ◽  
Visible Spectral Range ◽  
Light Emitting ◽  
Surface Morphologies

Abstract:We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

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