Low-temperature growth of carbon nanotube by thermal chemical vapor deposition with FeZrN catalyst

2004 ◽  
Vol 22 (4) ◽  
pp. 1834 ◽  
Author(s):  
Tetsuya Shiroishi ◽  
Takao Sawada ◽  
Akihiko Hosono ◽  
Shuhei Nakata ◽  
Yasunori Kanazawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition

Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst

2006 ◽  
Vol 45 (6A) ◽  
pp. 5329-5331 ◽  
Author(s):  
Katsunori Aoki ◽  
Tetsurou Yamamoto ◽  
Hiroshi Furuta ◽  
Takashi Ikuno ◽  
Shinichi Honda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Carbon Nanofiber ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition

Low Temperature growth of poly-crystalline film of Silicon-rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition

2000 ◽  
Vol 638 ◽  
Author(s):  
Kousaku Shimizu ◽  
Jianjun Zhang ◽  
Jeong-Woo Lee ◽  
Jun-Ichi Hanna
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Residence Time ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition ◽  
Source Materials

AbstractLow temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition method, which is a newly developed technique for preparing poly-SiGe by using redox reactions in a set of source materials, i.e., Si2H6 and GeF4. In order to prepare silicon-rich poly-SiGe of high mobility, a series of experiment on total pressure, gas flow rates of the source materials and dilution gas of He, and residence time at 450°C has been investigated.At 0.45 Torr, high crystallinity films with high silicon content were prepared, however, homogeneity of film thickness and reproducibility of the film growth was quite low for device application. For overcoming this problem, the growth condition has been studied especially in higher-pressure range of 5-15 Torr. Appropriate choice of the residence time and the gas flow ratios lead to significant improvement in the Si content in the films. Finally, more than 95% of silicon-rich poly-SiGe films, which is p-type, has 7.5 cm2/Vs of Hall mobility and (220) orientation, have been prepared at 10 Torr and 450°C within ±2% fluctuation of reproducibility which is enough to fabricate devices.

Low temperature growth of SWNTs on a nickel catalyst by thermal chemical vapor deposition

Nano Research ◽  
2010 ◽  
Vol 4 (4) ◽  
pp. 334-342 ◽  
Author(s):  
Maoshuai He ◽  
Alexander I. Chernov ◽  
Elena D. Obraztsova ◽  
Jani Sainio ◽  
Emma Rikkinen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Nickel Catalyst ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Thermal Chemical Vapor Deposition

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

2014 ◽  
Vol 9 (1) ◽  
pp. 347 ◽  
Author(s):  
Ning Han ◽  
Fengyun Wang ◽  
Zaixing Yang ◽  
SenPo Yip ◽  
Guofa Dong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth
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