Nanoscale current transport in epitaxial SrTiO[sub 3] on n[sup +]-Si investigated with conductive atomic force microscopy

2004 ◽  
Vol 22 (4) ◽  
pp. 2030 ◽  
Author(s):  
D. M. Schaadt ◽  
E. T. Yu ◽  
V. Vaithyanathan ◽  
D. G. Schlom
Keyword(s):  
Atomic Force Microscopy ◽  
Current Transport ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Insights into dynamic sliding contacts from conductive atomic force microscopy

2020 ◽  
Vol 2 (9) ◽  
pp. 4117-4124
Author(s):  
Nicholas Chan ◽  
Mohammad R. Vazirisereshk ◽  
Ashlie Martini ◽  
Philip Egberts
Keyword(s):  
Electrical Conductivity ◽  
Atomic Force Microscopy ◽  
Sliding Contact ◽  
Current Transport ◽  
Conductive Atomic Force Microscopy ◽  
Sliding Contacts ◽  
Force Microscopy ◽  
Single Asperity ◽  
Atomic Force ◽  
Sliding Dynamics

Measuring the electrical conductivity serves as a proxy for characterizing the nanoscale contact. In this work, the correlation between sliding dynamics and current transport at single asperity sliding contact is investigated.

Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements

2009 ◽  
Vol 1205 ◽  
Author(s):  
Filippo Giannazzo ◽  
Sushant Sonde ◽  
Jean-Roch Huntzinger ◽  
Antoine Tiberj ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Buffer Layer ◽  
Dirac Point ◽  
Current Transport ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Atomic Force ◽  
Positively Charged

AbstractConductive Atomic Force Microscopy was applied to study the lateral uniformity of current transport at the interface between graphene and 4H-SiC, both in the case of epitaxial graphene (EG) grown on the Si face of 4H-SiC and in the case of graphene exfoliated from HOPG and deposited (DG) on the same substrate. This comparison is aimed to investigate the role played by the C-rich buffer layer present at EG/4H-SiC interface and absent in the case of DG/4H-SiC. The distribution of the local Schottky barrier heights at EG/4H-SiC interface (ΦEG) was compared with the distribution measured at DG/4H-SiC interface (ΦDG), showing that ΦEG (0.36±0.1eV ) is ˜0.49eV lower than ΦDG (0.85 ± 0.06eV). This difference is explained in terms of the Fermi level pinning ˜0.49eV above the Dirac point in EG, due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the buffer layer.

Direct investigation of current transport in cells by conductive atomic force microscopy

2019 ◽  
Vol 277 (1) ◽  
pp. 49-57
Author(s):  
W. ZHAO ◽  
L.‐Z. CHEONG ◽  
S. XU ◽  
W. CUI ◽  
S. SONG ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Transport ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Investigation ◽  
In Cells

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

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