Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study

2004 ◽  
Vol 22 (4) ◽  
pp. 1606-1609 ◽  
Author(s):  
N. Shtinkov ◽  
S. Turcotte ◽  
J.-N. Beaudry ◽  
P. Desjardins ◽  
R. A. Masut
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Tight Binding ◽  
Binding Study ◽  
Electronic And Optical Properties

scholarly journals Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

2009 ◽  
Vol 40 (3) ◽  
pp. 418-420 ◽  
Author(s):  
A. Molina ◽  
A. García-Cristóbal ◽  
A. Cantarero
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Tight Binding ◽  
Binding Study

Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect

2012 ◽  
Vol 111 (6) ◽  
pp. 063701 ◽  
Author(s):  
Marko Stölzel ◽  
Johannes Kupper ◽  
Matthias Brandt ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Stark Effect ◽  
Electronic And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

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