Errata: “Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyano- quinodimethane thin film grown by vacuum evaporation” [J. Vac. Sci. Technol. B 20, 673 (2002)]

2004 ◽  
Vol 22 (3) ◽  
pp. 1213
Author(s):  
J. C. Li ◽  
W. M. Liu ◽  
Z. Q. Xue
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Pattern Formation ◽  
Microscopy Study ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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