scholarly journals Electroless copper deposition as a seed layer on TiSiN barrier

2004 ◽  
Vol 22 (4) ◽  
pp. 1852-1856 ◽  
Author(s):  
Y. C. Ee ◽  
Z. Chen ◽  
S. Xu ◽  
L. Chan ◽  
K. H. See ◽  
...  
Keyword(s):  
Seed Layer ◽  
Copper Deposition ◽  
Electroless Copper

Selective electroless copper deposition on aluminum nitride substrate with patterned copper seed layer

2005 ◽  
Vol 491 (1-2) ◽  
pp. 18-22 ◽  
Author(s):  
Hiroshi Yanagimoto ◽  
Shigehito Deki ◽  
Kensuke Akamatsu ◽  
Kazuo Gotoh
Keyword(s):  
Aluminum Nitride ◽  
Seed Layer ◽  
Copper Deposition ◽  
Electroless Copper ◽  
Copper Seed Layer

Organic Solution Deposition of Copper Seed Layers onto Barrier Metals

2000 ◽  
Vol 612 ◽  
Author(s):  
H. Gu ◽  
R. Fang ◽  
T. J. O'Keefe ◽  
M. J. O'Keefe ◽  
W.-S. Shih ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Copper Deposition ◽  
Copper Films ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Spontaneous Deposition ◽  
Electroless Copper ◽  
Barrier Metal ◽  
Seed Layers

AbstractSpontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1µm to 1.0µm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.

Electroless copper deposition on silicon with titanium seed layer

2006 ◽  
Vol 98 (1) ◽  
pp. 95-102 ◽  
Author(s):  
Rajendra K. Aithal ◽  
S. Yenamandra ◽  
R.A. Gunasekaran ◽  
P. Coane ◽  
K. Varahramyan
Keyword(s):  
Seed Layer ◽  
Copper Deposition ◽  
Electroless Copper

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

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