Organometallic vapor phase epitaxy of GaAs[sub 1−x]N[sub x] alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

J.-N. Beaudry; R. A. Masut; P. Desjardins; P. Wei; M. Chicoine; G. Bentoumi; R. Leonelli; F. Schiettekatte; S. Guillon

doi:10.1116/1.1689296

Organometallic vapor phase epitaxy of GaAs[sub 1−x]N[sub x] alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1689296 ◽

2004 ◽

Vol 22 (3) ◽

pp. 771 ◽

Cited By ~ 17

Author(s):

J.-N. Beaudry ◽

R. A. Masut ◽

P. Desjardins ◽

P. Wei ◽

M. Chicoine ◽

...

Keyword(s):

Vapor Phase ◽

Lattice Parameter ◽

Parameter Variation ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Lattice Parameter Variation ◽

Nitrogen Incorporation

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GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.12.039 ◽

2008 ◽

Vol 310 (6) ◽

pp. 1040-1048 ◽

Cited By ~ 5

Author(s):

J.-N. Beaudry ◽

R.A. Masut ◽

P. Desjardins

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Nitrogen Incorporation

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Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Cited By ~ 3

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00645-6 ◽

1999 ◽

Vol 273-274 ◽

pp. 770-773 ◽

Cited By ~ 32

Author(s):

Y Fujiwara ◽

T Kawamoto ◽

T Koide ◽

Y Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Luminescence Properties ◽

Organometallic Vapor Phase Epitaxy

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Lattice parameter variation of Al3 (Ti, V, Zr, Hf) in Al-2 AT.% (Ti, V, Zr, Hf) alloys

Scripta Metallurgica ◽

10.1016/0036-9748(83)90293-4 ◽

1983 ◽

Vol 17 (10) ◽

pp. 1247-1251 ◽

Cited By ~ 49

Author(s):

M. Zedalis ◽

M.E. Fine

Keyword(s):

Lattice Parameter ◽

Parameter Variation ◽

Lattice Parameter Variation

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Lattice-parameter variation with carbon content of martensite. II. Long-wavelength theory of the cubic-to-tetragonal transition

Physical Review B ◽

10.1103/physrevb.52.9979 ◽

1995 ◽

Vol 52 (14) ◽

pp. 9979-9987 ◽

Cited By ~ 27

Author(s):

Zhong Fan ◽

Liu Xiao ◽

Zhang Jinxiu ◽

Kang Mokuang ◽

Guo Zhenqi

Keyword(s):

Carbon Content ◽

Lattice Parameter ◽

Parameter Variation ◽

Long Wavelength ◽

Lattice Parameter Variation

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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

Journal of Electronic Materials ◽

10.1007/bf02655263 ◽

1994 ◽

Vol 23 (2) ◽

pp. 159-166 ◽

Cited By ~ 2

Author(s):

H. Kanber ◽

S. X. Bar ◽

P. E. Norris ◽

C. Beckham ◽

M. Pacer

Keyword(s):

Integrated Circuits ◽

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Selective Area ◽

Monolithic Integrated Circuits ◽

Area Growth

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-021-08832-9 ◽

2021 ◽

Author(s):

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Yafei Liu ◽

Kim Kisslinger ◽

Xiao Tong ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l507 ◽

1991 ◽

Vol 30 (Part 2, No. 3B) ◽

pp. L507-L510 ◽

Cited By ~ 15

Author(s):

Shizuo Fujita ◽

Shin-ya Hirata ◽

Shigeo Fujita

Keyword(s):

Vapor Phase ◽

Alkyl Group ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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