scholarly journals Excimer laser annealing of p-type perovskite thin films

2004 ◽  
Vol 22 (3) ◽  
pp. 870 ◽  
Author(s):  
X. Du ◽  
J. J. Dubowski ◽  
M. Post ◽  
D. Wang ◽  
J. Tunney
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
P Type

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

2015 ◽  
Vol 424 ◽  
pp. 38-41 ◽  
Author(s):  
Daishi Shiojiri ◽  
Ryosuke Yamauchi ◽  
Daiji Fukuda ◽  
Nobuo Tsuchimine ◽  
Satoru Kaneko ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

1999 ◽  
Author(s):  
Seung-Jae Moon ◽  
Ming-Hong Lee ◽  
Mutsuko Hatano ◽  
Kenkichi Suzuki ◽  
Constantine P. Grigoropoulos
Keyword(s):  
Thin Films ◽  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Transient Temperature ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Activation of N-Acceptor in MOCVD-ZnSe by Excimer Laser Annealing

1992 ◽  
Vol 281 ◽  
Author(s):  
Nallan Padmapani ◽  
G. F. Neumark ◽  
N. Taskar ◽  
D. Dorman
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Free Exciton ◽  
Plasma Source ◽  
Exciton Peak ◽  
Electrical Measurements ◽  
Excimer Laser Annealing ◽  
Recent Success ◽  
Peak Intensity ◽  
P Type

ABSTRACTThe recent success in obtaining blue-green diode lasers using ZnSe-based heterostructures has been mainly due to the successful p-doping of ZnSe using a N plasma source in an MBE system. P-type ZnSe can also be grown by MOCVD, using NH3 as the dopant source. Dopant concentrations of up to 1018 cm−3 have been obtained but net acceptor concentrations are in the range of only about 1015 cm−3 Activation of the remaining N has been achieved to some extent (NA -ND∼3*1016cm−3 ) by rapid thermal annealing. However, this has had limited success. We have used fast surface annealing by an excimer laser to activate the N. We have observed an increase in the ratio of Acceptor Bound Exciton peak intensity to Free Exciton peak intensity on annealing and this effect increases as we increase the laser power density from 10 to 30 MW/cm2. Electrical measurements ( C-V ) give a net acceptor concentration of ∼2*1016 cm−3 and thus confirm the increase in carrier concentration after annealing.

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