Electron beam prebunching in planar cold cathodes with surface current carrying thin films

2004 ◽  
Vol 22 (1) ◽  
pp. 231
Author(s):  
R. Krishnan ◽  
M. Cahay
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Surface Current ◽  
Cold Cathodes

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Electron beam induced effects in Cu/GeSe2amorphous films

2003 ◽  
Vol 777 ◽  
Author(s):  
J.S. Romero ◽  
A.G. Fitzgerald
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Simple Model ◽  
Copper Concentration ◽  
Negative Charge ◽  
Electron Bombardment ◽  
Continuous Operation ◽  
Electron Radiation ◽  
Crystalline Product ◽  
Intense Electron

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Fabrication of particle-free thin films by laser ablation combined with an electron beam

2006 ◽  
Vol 500 (1-2) ◽  
pp. 101-104 ◽  
Author(s):  
Tadashi Kitahara ◽  
Yoshiro Nomoto ◽  
Norio Ichikawa
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Laser Ablation

Electron-beam deposition of vanadium dioxide thin films

2012 ◽  
Vol 111 (3) ◽  
pp. 975-981 ◽  
Author(s):  
R. E. Marvel ◽  
K. Appavoo ◽  
B. K. Choi ◽  
J. Nag ◽  
R. F. Haglund
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Vanadium Dioxide ◽  
Electron Beam Deposition ◽  
Vanadium Dioxide Thin Films ◽  
Beam Deposition
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