ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

2004 ◽  
Vol 22 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Giwan Yoon ◽  
Munhyuk Yim ◽  
Donghyun Kim ◽  
Mai Linh ◽  
Dongkyu Chai
Keyword(s):  
Deposition Temperature ◽  
Film Growth ◽  
Growth Characteristics ◽  
Film Deposition ◽  
Zno Film

Properties of SiO2 Films Fabricated by Microwave Ecr Plasma Processing with and Without Energetic Particle Bombardment During Film Deposition Part I. Fabrication Processes and Physical Properties

1991 ◽  
Vol 223 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Silicon Dioxide ◽  
Particle Bombardment ◽  
Energetic Particle ◽  
Deposition Temperature ◽  
Film Growth ◽  
Plasma Processing ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Group A ◽  
Group B

ABSTRACTSilicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. The systems used for fabricating these two different groups of samples are described. The films were deposited at various deposition temperatures. On the basis of the deposition rate as a function of deposition temperature the film growth for group A samples is due mainly to mass-limited reaction, and that for group B samples is due to surface rate limited reaction. The stoichiometric level for group A does not change with deposition temperature though the films density increases with increasing deposition temperature. However, group B samples exhibit an off-stoichiometric property but they become highly stoichiometric as the deposition temperature is increased beyond 200 °C

Towards Lower Deposition Temperatures of Spray Deposited ZnO Films

2007 ◽  
Vol 1012 ◽  
Author(s):  
Sophie E. Gledhill ◽  
Nicholas Allsop ◽  
Pablo Thier ◽  
Christian Camus ◽  
Martha Lux-Steiner ◽  
...  
Keyword(s):  
Deposition Temperature ◽  
Film Growth ◽  
Spray Deposition ◽  
Free Charge Carrier ◽  
Precursor Solution ◽  
Zno Films ◽  
Zno Film ◽  
Roll Coating ◽  
Roll To Roll ◽  
Substrate Temperatures

AbstractHighly transparent, conductive ZnO:Al doped films have been deposited by a non-vacuum spray deposition method. At substrate temperatures above 400C we attain resistivites of 5x10-3Ohmcm and free charge carrier concentrations of 10-20cm-3. ZnO film growth and quality are sensitive to the precursor solution. For a non-vacuum process the properties of the films are excellent.The challenge is to lower the deposition temperature to a maximum of 250C to be useful for Cu(In, Ga)(S, Se)2 solar cells and yet maintain the ZnO film quality and conductivity. As the deposition temperature decreases the resistivity of the ZnO drastically increases yet is conducting enough to be used undoped as the intrinsic ZnO layer. This is particularly relevant as the deposition technique is readily up-scalable to roll to roll coating processes.

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

ZnSe and ZnO film growth by pulsed-laser deposition

1998 ◽  
Vol 127-129 ◽  
pp. 496-499 ◽  
Author(s):  
Y.R. Ryu ◽  
S. Zhu ◽  
S.W. Han ◽  
H.W. White ◽  
P.F. Miceli ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Film

A buffer layer for ZnO film growth on sapphire

2008 ◽  
Vol 602 (14) ◽  
pp. 2600-2603 ◽  
Author(s):  
Kefei Zheng ◽  
Qinlin Guo ◽  
E.G. Wang
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
Zno Film

Diamond Films: Recent Developments in Theory and Practice

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 28-31 ◽  
Author(s):  
A.M. Stoneham ◽  
I.J. Ford ◽  
P.R. Chalker
Keyword(s):  
Film Growth ◽  
Defect Density ◽  
Diamond Films ◽  
Electrical Contacts ◽  
Film Deposition ◽  
Theory And Practice ◽  
Maximum Effect ◽  
Recent Developments ◽  
Improved Performance ◽  
The Many

The diamond films of the early 1980s presented two quite different challenges. First how could this new form of diamond be exploited technically? Second, how could this clearly nonequilibrium generation of diamond be understood and the understanding be used to maximum effect? We shall be discussing the ideas of theory and modeling, and we will show how they have contributed to the interplay of science and technology.The science of diamond films is the art of beating nature in the use of carbon. Theory gives the understanding to improve this art. One way in which we improve on nature is in new geometries: controlled growth over selected surfaces o surface regions. The coverage, defect density, microstructure, and rate of growth are key issues. Another way to beat nature is controlled doping. Could wmake n-type semiconductors or lasers using diamond films? A third direction might be routes to control interfaces. Grai boundaries and the regions between small, misaligned crystals affect thermal properties and electron emission. Difficulties with electrical contacts may limit the use of diamond films as semiconductors or insulators. Substrate-film adhesion can determine tribological performance.If theory is to play a role in controlling film deposition, we need to understand the role of theory itself. Theory can add value at several distinct levels. At the highest level, modeling has the potential to provide a substitute for experiment, especially when information is needed about behavior at extreme conditions. When the phenomena are very fast or very complex, theory can be used to interpret limited experiments. At a more modest level, even simple quantitative models can illustrate the many processes occurring during film growth. Atomistic theories of this type can identify the rate-determining steps and point to ways of influencing them. Mesoscopic theories, especially combined with macroscopic approaches like elasticity theory, can identify routes to improved performance.

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

scholarly journals Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 443
Author(s):  
Ji-Hye Kwon ◽  
Du-Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Film Deposition ◽  
Calculated Density ◽  
X Ray ◽  
Positively Charged ◽  
Made In ◽  
Ti Films

This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

Understanding the Formation of Conducting Filaments in RRAM Through the Design of Experiments

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640007 ◽  
Author(s):  
Panagiotis Bousoulas ◽  
Dimitris Tsoukalas
Keyword(s):  
Film Growth ◽  
Memory Performance ◽  
Film Deposition ◽  
Constant Thickness ◽  
Gradual Transition ◽  
Main Body ◽  
Switching Effect ◽  
Conductive Atomic Force Microscopy ◽  
Rectification Effect ◽  
Switching Characteristics

The resistive switching effect in TiO2-x memory devices is thoroughly investigated in order to obtain optimum memory performance, in terms of switching ratio, uniformity of the switching characteristics and multilevel capability. As a result, various fabrication procedures were followed with the aim to enhance the above properties. The main body of our devices was TiO2-x thin film, with constant thickness of 45 nm, while different approaches were implemented during the fabrication process, such as increasing the oxygen content during film growth, depositing top electrodes with different thicknesses, inserting a layer of nanocrystals (NCs) within the middle of the dielectric and using two various oxygen contents during film deposition in order to create a homobilayer structure. The common feature of these techniques is to control the regions where oxygen vacancy creation will take place in order to control the formation/rupture of the conducting filaments (CFs). Conductive-Atomic Force Microscopy (C-AFM) results support the localized nature of the switching effect. The gradual transition during the SET process, which allows precise CF control through proper external stimulus, as well as the self-rectification effect, which alleviates the sneakpath issue in crossbar architecture, are also important assets of our experimental approach.

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