Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

2003 ◽  
Vol 21 (6) ◽  
pp. 2378 ◽  
Author(s):  
K. Ip ◽  
K. H. Baik ◽  
Y. W. Heo ◽  
D. P. Norton ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Annealing Temperature Dependence

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Annealing Temperature Dependence of Photoluminescence from Silicon-Rich Silica Films

2001 ◽  
Vol 3 (4) ◽  
pp. 891-895
Author(s):  
Wu Xue-mei ◽  
Zhuge Lan-jian ◽  
Tang Nai-yun ◽  
Ye Chun-nuan ◽  
Ning Zao-yuan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Annealing Temperature ◽  
Silica Films ◽  
Annealing Temperature Dependence
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