scholarly journals Low temperature pulsed etching of large glass substrates

2003 ◽  
Vol 21 (4) ◽  
pp. 892-894
Author(s):  
L. Dubost ◽  
A. Belinger ◽  
J. Perrin ◽  
R. W. Boswell
Keyword(s):  
Low Temperature ◽  
Glass Substrates ◽  
Large Glass

Optimization of low-temperature poly-Si TFT-LCDs and a large-scale production line for large glass substrates

2001 ◽  
Vol 9 (3) ◽  
pp. 173-180 ◽  
Author(s):  
Kiyoshi Yoneda ◽  
Hidenori Ogata ◽  
Shinji Yuda ◽  
Kohji Suzuki ◽  
Toshifumi Yamaji ◽  
...  
Keyword(s):  
Low Temperature ◽  
Production Line ◽  
Large Scale ◽  
Scale Production ◽  
Glass Substrates ◽  
Large Glass ◽  
Large Scale Production

DEVELOPMENT OF A POROUS CERAMIC-BASED AIR FLOAT PLATFORM FOR LARGE GLASS SUBSTRATES

2011 ◽  
Vol 2 (4) ◽  
pp. 313-321 ◽  
Author(s):  
Yeeu-Chang Lee ◽  
Chin-Chang Yu ◽  
Ruey-Yih Tsai ◽  
Jen-Chung Hsiao ◽  
Ching-Hao Chen ◽  
...  
Keyword(s):  
Porous Ceramic ◽  
Glass Substrates ◽  
Large Glass

scholarly journals Properties of InGaN deposited on Glass at Low Temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith
Keyword(s):  
Low Temperature ◽  
Indium Tin Oxide ◽  
High Electron ◽  
Transparent Conductor ◽  
High Background ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
High Electron Concentration ◽  
Background Absorption

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.

scholarly journals Effect of Halogen on the Structure of Low Temperature Polycrystalline Silicon Thin Films Fabricated on Glass Substrates.

1999 ◽  
Vol 107 (1251) ◽  
pp. 1099-1104 ◽  
Author(s):  
Toshio KAMIYA ◽  
Yoshiteru MAEDA ◽  
Kouichi NAKAHATA ◽  
Takashi KOMARU ◽  
Charles M. FORTMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Glass Substrates ◽  
Silicon Thin Films

Growth of Antimony Thin Films Using Perbenzylated Organometallic Precursors

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Carbon ◽  
Design Strategies ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Organometallic Precursors

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

2006 ◽  
Vol 496 (1) ◽  
pp. 112-116 ◽  
Author(s):  
A.N. Banerjee ◽  
C.K. Ghosh ◽  
K.K. Chattopadhyay ◽  
Hideki Minoura ◽  
Ajay K. Sarkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Dc Sputtering ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Dc Sputtering Technique

Low temperature hermetic laser-assisted glass frit encapsulation of soda-lime glass substrates

2017 ◽  
Vol 96 ◽  
pp. 107-116 ◽  
Author(s):  
Seyedali Emami ◽  
Jorge Martins ◽  
Luísa Andrade ◽  
Joaquim Mendes ◽  
Adélio Mendes
Keyword(s):  
Low Temperature ◽  
Soda Lime ◽  
Glass Frit ◽  
Soda Lime Glass ◽  
Glass Substrates

Thin-film transistors from very low temperature polycrystalline Si on glass substrates

1989 ◽  
Vol 32 (5) ◽  
pp. 391-396 ◽  
Author(s):  
W. Schmolla ◽  
J. Diefenbach ◽  
G. Blang ◽  
B. Ocker ◽  
W. Senske
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Very Low Temperature

scholarly journals Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

2013 ◽  
Vol 58 (30) ◽  
pp. 3617-3623 ◽  
Author(s):  
EnPing Wang ◽  
JiMing Bian ◽  
FuWen Qin ◽  
Dong Zhang ◽  
YueMei Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Glass Substrates
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