Evaluation of calixarene—derivatives as high-resolution negative tone electron-beam resists

2002 ◽  
Vol 20 (6) ◽  
pp. 2958 ◽  
Author(s):  
H. Sailer ◽  
A. Ruderisch ◽  
D. P. Kern ◽  
V. Schurig
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Negative Tone

Study of Development Processes for ZEP-520 as a High-Resolution Positive and Negative Tone Electron Beam Lithography Resist

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FC05 ◽  
Author(s):  
Mohammad Ali Mohammad ◽  
Kirill Koshelev ◽  
Taras Fito ◽  
David Ai Zhi Zheng ◽  
Maria Stepanova ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Development Processes ◽  
Negative Tone

New High Resolution Liquid Crystal Electron Beam Resists

1999 ◽  
Vol 584 ◽  
Author(s):  
A. P. G. Robinson ◽  
R. E. Palmer ◽  
T. Tada ◽  
T. Kanayamat ◽  
M. T. Allen ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Liquid Crystalline ◽  
Silicon Substrates ◽  
Polar Solvents ◽  
New Family ◽  
High Durability ◽  
Definition Of ◽  
Negative Tone ◽  
Crystal Electron

AbstractWe report the development of a new family of electron beam resists based on liquid crystalline polysubstituted derivatives of triphenylene. These new resists show excellent performance in terms of both high resolution and high durability to plasma etching. Films of the derivatives have been produced in a controlled manner via room temperature spin coating on hydrogen terminated silicon substrates. The dissolution behaviour of the derivatives in various organic solvents was altered by exposure to a 20 keV electron beam. The solubility of the derivative hexapentyloxytriphenylene, in polar solvents, was substantially increased by electron doses greater than ∼ 3 × 10-4 C/cm2 (positive tone behaviour). Doses greater than ∼ 2.5 × 10-3 C/cm2 led to negative tone behaviour in both polar and non-polar solvents. Other derivatives also demonstrated a reduction in their dissolution rate for doses between ∼ 1 × 10-3 and ∼ 7 × 10-3 C/cm2. The derivative sensitivity was found to be roughly proportional to the molecular mass. Negative tone patterns were found to have an etch durability ∼ 70 % greater than that of a conventional novolac based negative tone resist (SAL601). The performance of these new resists has been demonstrated by the definition of line and space patterns with a resolution of ∼ 14 nm, whilst structures with an aspect ratio of.∼ 50 to 1 were etched into the silicon substrate.

High Resolution, Novolak Based Negative Tone Electron Beam Resist

1988 ◽  
Author(s):  
Mark deGrandpre ◽  
Karen Graziano ◽  
Stephen D. Thompson ◽  
Hua-yu Liu ◽  
Lauren Blum
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Negative Tone

Fullerene Derivatives as Novel Resist Materials for Fabrication of MEMS Devices by Electron Beam Lithography

1998 ◽  
Vol 546 ◽  
Author(s):  
A.P.G. Robinson ◽  
R.E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E.J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electronic Devices ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Order Of Magnitude ◽  
Negative Tone ◽  
20 Nm ◽  
Dry Etch ◽  
Derivatives Of

AbstractThe fabrication of MEMS and electronic devices relies heavily on lithography. We have explored the application of derivatives of C60, as high resolution, high etch durability resists. Spin coating was used to produce films of various methanofullerenes on silicon substrates, with thickness ranging from 20 to 200 nm. These films behave as effective high resolution negative tone electron beam resists allowing sub 20 nm patterning of silicon which compares favorably with other negative tone resists. Organic solvents such as monochlorobenzene and chloroform can be used to develop the exposed films. The films have sensitivities of 4 × 10−3 to 8 × 10−4 C/cm2 for 20 keV electrons, more than an order of magnitude higher than the sensitivity of C60,. The dry etch durabilities of these compounds are considerably higher than those of conventional resists. A silicon grid with hole depth 160 nm and wall thickness 20 nm has been fabricated to demonstrate the high resolution and high etch durability of these resists.

Study of Development Processes for ZEP-520 as a High-Resolution Positive and Negative Tone Electron Beam Lithography Resist

2012 ◽  
Vol 51 ◽  
pp. 06FC05 ◽  
Author(s):  
Mohammad Ali Mohammad ◽  
Kirill Koshelev ◽  
Taras Fito ◽  
David Ai Zhi Zheng ◽  
Maria Stepanova ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Development Processes ◽  
Negative Tone

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

High-resolution observation of sintered alumina (Al2O3) using the specimen-heated and electron-beam-induced conductivity method in a UHR-SEM

1994 ◽  
Vol 52 ◽  
pp. 1046-1047
Author(s):  
K. Ogura ◽  
T. Suzuki ◽  
C. Nielsen
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Specimen Preparation ◽  
Conductivity Method ◽  
Fine Grain ◽  
Grain Structures ◽  
Resolution Observation ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Charging Effect

In spite of the complicated specimen preparation, Transmission Electron Microscopes (TEM) have traditionally been used for the investigation of the fine grain structures of sintered ceramics. Scanning Electron Microscopes (SEM) have not been used much for the same purpose as TEM because of poor results caused by the specimen charging effect, and also the lack of sufficient resolution. Here, we are presenting a successful result of high resolution imaging of sintered alumina (pure Al2O3) using the Specimen Heated and Electron Beam Induced Conductivity (SHEBIC) method, which we recently reported, in an ultrahigh resolution SEM (UHR-SEM). The JSM-6000F, equipped with a Field Emission Gun (FEG) and an in-lens specimen position, was used for this application.After sintered Al2O3 was sliced into a piece approximately 0.5 mm in thickness, one side was mechanically polished to get a shiny plane for the observation. When the observation was started at 20 kV, an enormous charging effect occured, and it was impossible to obtain a clear Secondary Electron (SE) image (Fig.1).

Quantitative high-resolution electron microscopy (HREM) of defects in ordered polymers

1996 ◽  
Vol 54 ◽  
pp. 166-167
Author(s):  
Patricia M. Wilson ◽  
David C. Martin
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Liquid Crystalline ◽  
High Resolution Electron Microscopy ◽  
Polymer Materials ◽  
Scattered Electron ◽  
Crystalline Polymers ◽  
Resolution Electron ◽  
Beam Damage

Efforts in our laboratory and elsewhere have established the utility of low dose high resolution electron microscopy (HREM) for imaging the microstructure of crystalline and liquid crystalline polymers. In a number of polymer systems, direct imaging of the lattice spacings by HREM has provided information about the size, shape, and relative orientation of ordered domains in these materials. However, because of the extent of disorder typical in many polymer microstructures, and because of the sensitivity of most polymer materials to electron beam damage, there have been few studies where the contrast observed in HREM images has been analyzed in a quantitative fashion.Here, we discuss two instances where quantitative information about HREM images has been used to provide new insight about the organization of crystalline polymers in the solid-state. In the first, we study the distortion of the polymer lattice planes near the core of an edge dislocation and compare these results to theories of dislocations in anisotropic and liquid crystalline solids. In the second, we investigate the variations in HREM contrast near the edge of wedge-shaped samples. The polymer used in this study was the diacetylene DCHD, which is stable to electron beam damage (Jc = 20 C/cm2) and highly crystalline. The instrument used in this work was a JEOL 4000 EX HRTEM with a beam blanidng device. More recently, the 4000 EX has been installed with instrumentation for dynamically recording scattered electron beam currents.

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