Subsurface interstitials as promoters of three-dimensional growth of Ti on Si(111): An x-ray standing wave, x-ray photoelectron spectroscopy, and atomic force microscopy investigation

2002 ◽  
Vol 20 (6) ◽  
pp. 1997 ◽  
Author(s):  
G. Kuri ◽  
Th. Schmidt ◽  
V. Hagen ◽  
G. Materlik ◽  
R. Wiesendanger ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Standing Wave ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force Microscopy Investigation ◽  
Atomic Force ◽  
Microscopy Investigation ◽  
Dimensional Growth

Nitridation of Substrates With Hydrazine Cyanurate for The Growth of Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
T. J. Kropewnicki ◽  
P. A. Kohl
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Composition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth

ABSTRACTThe use of purified hydrazine cyanurate as a solid source of hydrazine in the low temperature nitridation of GaAs (100) and (111) and sapphire (0001) is demonstrated. Thenitridated surfaces were analyzed by X-ray Photoelectron Spectroscopy (XPS) for chemical composition and Atomic Force Microscopy for surface morphology. The GaAs surfaces were composed primarily of GaN, GaAs, and Ga2O3, and were as smooth as unprocessed standards. The nitridated sapphire surfaces were composed of A1NxO1-x and exhibited three-dimensional growth for long nitridation times.

Investigation of Ti/CuO interface by X-ray photoelectron spectroscopy and atomic force microscopy

2018 ◽  
Vol 51 (2) ◽  
pp. 246-253
Author(s):  
Dev Raj Chopra ◽  
Justin Seth Pearson ◽  
Darius Durant ◽  
Ritesh Bhakta ◽  
Anil R. Chourasia
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

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