Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using In[sub x]Ga[sub 1−x]As capping layers

2002 ◽  
Vol 20 (3) ◽  
pp. 1188 ◽  
Author(s):  
Eui-Tae Kim ◽  
Zhonghui Chen ◽  
Max Ho ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dual Response ◽  
Inas Quantum Dot

InGaAs-Capped InAs–GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

2009 ◽  
Vol 21 (18) ◽  
pp. 1332-1334 ◽  
Author(s):  
Wei-Hsun Lin ◽  
Chi-Che Tseng ◽  
Kuang-Ping Chao ◽  
Shu-Cheng Mai ◽  
Shih-Yen Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Infrared Range ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot ◽  
Long Wavelength Infrared

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection

2002 ◽  
Vol 92 (7) ◽  
pp. 4141-4143 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dot ◽  
Far Infrared ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Inas Quantum Dot

InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

2002 ◽  
Vol 92 (12) ◽  
pp. 7462-7468 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Strain Relief ◽  
Quantum Dot Infrared Photodetectors ◽  
Inas Quantum Dot

InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

2004 ◽  
Author(s):  
Wei Zhang ◽  
Hochul Lim ◽  
Stanley Tsao ◽  
Kan Mi ◽  
Bijan Movaghar ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Inas Quantum Dot

Noise and photoconductive gain in InAs quantum-dot infrared photodetectors

2003 ◽  
Vol 83 (6) ◽  
pp. 1234-1236 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Photoconductive Gain ◽  
Quantum Dot Infrared Photodetectors ◽  
Inas Quantum Dot
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