scholarly journals Effect of ion bombardment and substrate orientation on structure and properties of titanium nitride films deposited by unbalanced magnetron sputtering

2002 ◽  
Vol 20 (3) ◽  
pp. 678-682 ◽  
Author(s):  
S. Guruvenket ◽  
G. Mohan Rao
Keyword(s):  
Magnetron Sputtering ◽  
Titanium Nitride ◽  
Ion Bombardment ◽  
Structure And Properties ◽  
Substrate Orientation ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

scholarly journals Structure and Properties of Nanocrystalline (TiZr)xN1−xThin Films Deposited by DC Unbalanced Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Yu-Wei Lin ◽  
Chia-Wei Lu ◽  
Ge-Ping Yu ◽  
Jia-Hong Huang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Nitrogen Flow Rate ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm) on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr) ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN). At high nitrogen flow rates (1.0–2.5 sccm), the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

Structure and Properties of TiBCN Coatings Synthesized Using Unbalanced Magnetron Sputtering

2013 ◽  
Vol 634-638 ◽  
pp. 3044-3047
Author(s):  
Wei Yu Ho ◽  
Ching Hui Hsieh ◽  
Chia Hang Tsai ◽  
Chien Liang Lin ◽  
Cheng Hsun Hsu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Dry Sliding ◽  
Structure And Properties ◽  
Glass Ball ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Wave Range

TiBCN coatings were prepared by magnetron sputtering installed with two kinds of target materials (Ti and TiB2) in a mixed Ar, N2 and C2H2 ambient. The results showed that the TiBCN coatings could be successfully obtained by reactive sputtering with Ti and TiB2 dual targets. Raman spectroscopy indicated that TiBCN had similar spectra with DLC, which confirmed with high C content, in the wave range of 1000 ~ 2000 cm-1. The hardness of the coatings would decrease with an increase of N and the sp3 bond in the coatings. The friction coefficient against soda-lime glass ball was decreased from 1.3 of blank WC-Co substrate to 0.35 of the coatings in dry sliding condition.

Biaxially aligned titanium nitride thin films deposited by reactive unbalanced magnetron sputtering

2006 ◽  
Vol 200 (8) ◽  
pp. 2764-2768 ◽  
Author(s):  
S. Mahieu ◽  
P. Ghekiere ◽  
G. De Winter ◽  
R. De Gryse ◽  
D. Depla ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Titanium Nitride ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron
Sign in / Sign up

Export Citation Format

Share Document