Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas

2002 ◽  
Vol 20 (1) ◽  
pp. 30-32 ◽  
Author(s):  
Ikurou Umezu ◽  
Kiminori Kohno ◽  
Tomohiro Yamaguchi ◽  
Akira Sugimura ◽  
Mitsuru Inada
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Gas ◽  
Silicon Nitride Films

Thermal Modelling of Pulsed Laser Ablation of Silicon Nitride Ceramics

2019 ◽  
pp. 369-381
Author(s):  
Ntombikazi Jojo ◽  
Cebolenkosi Philani Ntuli ◽  
Lerato Cresilda Tshabalala ◽  
Sisa Pityana
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thermal Modelling ◽  
Nitride Ceramics

Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

2002 ◽  
Vol 197-198 ◽  
pp. 376-378 ◽  
Author(s):  
I Umezu ◽  
T Yamaguchi ◽  
K Kohno ◽  
M Inada ◽  
A Sugimura
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Gas ◽  
Sinx Film

Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

2013 ◽  
Vol 278 ◽  
pp. 265-267 ◽  
Author(s):  
Gerrit Heinrich ◽  
Markus Wollgarten ◽  
Mario Bähr ◽  
Alexander Lawerenz
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Threshold Fluence ◽  
Nitride Layers ◽  
Near Threshold

scholarly journals Effect of nitrogen gas on preparation of Ti–Al–N thin films by pulsed laser ablation

1998 ◽  
Vol 127-129 ◽  
pp. 994-998 ◽  
Author(s):  
Akiharu Morimoto ◽  
Hideki Shigeno ◽  
Shinya Morita ◽  
Yasuto Yonezawa ◽  
Tatsuo Shimizu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Gas

Reaction between nitrogen gas and silicon species during pulsed laser ablation

2003 ◽  
Vol 21 (5) ◽  
pp. 1680-1682 ◽  
Author(s):  
Ikurou Umezu ◽  
Mitsuru Inada ◽  
Kimihiro Kohno ◽  
Tomohiro Yamaguchi ◽  
Toshiharu Makino ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nitrogen Gas

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

scholarly journals Doping nanoparticles using pulsed laser ablation in a liquid containing the doping agent

2019 ◽  
Vol 1 (10) ◽  
pp. 3963-3972 ◽  
Author(s):  
Arsène Chemin ◽  
Julien Lam ◽  
Gaétan Laurens ◽  
Florian Trichard ◽  
Vincent Motto-Ros ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Doping Agent ◽  
Laser Ablation In Liquids ◽  
Dope Nanoparticles

While doping is crucial for numerous technological applications, its control remains difficult especially when the material is reduced down to the nanometric scale. We suggest a new way to dope nanoparticles using laser ablation in liquids.

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