In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN

2000 ◽  
Vol 7 (3) ◽  
pp. 167-168 ◽  
Author(s):  
D. Gall ◽  
R. T. Haasch ◽  
N. Finnegan ◽  
T.-Y. Lee ◽  
C.-S. Shin ◽  
...  
Keyword(s):  
Transition Metal ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
X Ray

scholarly journals Metal/GaN contacts studied by electron spectroscopies

2000 ◽  
Vol 5 (S1) ◽  
pp. 915-921
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

Metal/GaN Contacts Studied by Electron Spectroscopies

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

AbstractAu/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

scholarly journals Stress-controlled decomposition routes in cubic AlCrN films assessed by in-situ high-temperature high-energy grazing incidence transmission X-ray diffraction

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
M. Meindlhumer ◽  
S. Klima ◽  
N. Jäger ◽  
A. Stark ◽  
H. Hruby ◽  
...  
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Stress Level ◽  
Grazing Incidence ◽  
High Energy ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
X Ray Diffraction ◽  
X Ray

AbstractThe dependence of decomposition routes on intrinsic microstructure and stress in nanocrystalline transition metal nitrides is not yet fully understood. In this contribution, three Al0.7Cr0.3N thin films with residual stress magnitudes of −3510, −4660 and −5930 MPa in the as-deposited state were in-situ characterized in the range of 25–1100 °C using in-situ synchrotron high-temperature high-energy grazing-incidence-transmission X-ray diffraction and temperature evolutions of phases, coefficients of thermal expansion, structural defects, texture as well as residual, thermal and intrinsic stresses were evaluated. The multi-parameter experimental data indicate a complex intrinsic stress and phase changes governed by a microstructure recovery and phase transformations taking place above the deposition temperature. Though the decomposition temperatures of metastable cubic Al0.7Cr0.3N phase in the range of 698–914 °C are inversely proportional to the magnitudes of deposition temperatures, the decomposition process itself starts at the same stress level of ~−4300 MPa in all three films. This phenomenon indicates that the particular compressive stress level functions as an energy threshold at which the diffusion driven formation of hexagonal Al(Cr)N phase is initiated, provided sufficient temperature is applied. In summary, the unique synchrotron experimental setup indicated that residual stresses play a decisive role in the decomposition routes of nanocrystalline transition metal nitrides.

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