Deposition of electronic quality amorphous silicon,a-Si:H, thin films by a hollow cathode plasma-jet reactive sputtering system

2001 ◽  
Vol 19 (4) ◽  
pp. 1571-1576 ◽  
Author(s):  
G. Pribil ◽  
Z. Hubička ◽  
R. J. Soukup ◽  
N. J. Ianno
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hollow Cathode ◽  
Plasma Jet ◽  
Reactive Sputtering ◽  
Cathode Plasma ◽  
Sputtering System

Measurements of plasma parameters during BaxSr1−x TiO3 thin films deposition by double hollow cathode plasma jet system

2006 ◽  
Vol 56 (S2) ◽  
pp. B1283-B1289 ◽  
Author(s):  
J. Olejníček ◽  
Z. Hubička ◽  
P. Virostko ◽  
A. Deyneka ◽  
L. Jastrabík ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Plasma Jet ◽  
Cathode Plasma ◽  
Plasma Parameters

Space Resolved Optical Emission Spectroscopy During Deposition of BaxSr1-xTiO3 Thin Films by Double Hollow Cathode Plasma Jet System

2009 ◽  
Vol 609 ◽  
pp. 105-109
Author(s):  
J. Olejníček ◽  
Zdenek Hubička ◽  
M. Čada ◽  
P. Virostko ◽  
Štepan Kment ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Jet ◽  
Optical Measurements ◽  
Rf Plasma ◽  
Oh Radicals ◽  
Cathode Plasma

Pulse modulated double hollow cathode RF plasma jet system with two separate independent nozzles made of BaTiO3 (BTO) and SrTiO3 (STO) was used for deposition of BSTO thin films on Si and on multi-layer Si/SiO2/TiO2/Pt substrates. Dielectric properties of BSTO layers strongly depend on ratio composition expressed by parameter x = Ba/(Ba+Sr) and on accuracy in presence of other elements. Space resolved optical emission spectroscopy (OES) was used mainly for monitoring of concentration of particles sputtered from the hollow cathode and for feedback correction of power supplied in both nozzles because applied power was responsible for sputtering speed of Ba and Sr particles. Main attention was focused on relation between ratio of spectral intensity of Ba, Ba+, Sr and Sr+ lines close to substrate and ratio of Ba and Sr concentration in the deposited film. 2D map of emission lines intensity distribution for Ba, Ba+, Sr, Sr+, Ti, Ar, and Ar+ for double hollow cathode plasma jet system with BTO and STO nozzles was created. OES was also used for observing of excess of Ti particles in final layer with negative effect on layer properties and for measurement of rotational temperature of OH radicals. Preliminary results of all these optical measurements are published in this paper. Deposited thin films were analyzed by X-ray diffraction, which confirmed presence of BSTO and STO perovskite phase in the films, by atomic force microscopy (AFM), by electron microprobe and by micro-Raman scattering measurement.

Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

2004 ◽  
Vol 808 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Scott A. Darveau ◽  
Christopher L. Exstrom
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Cathode Plasma ◽  
Glass Substrates ◽  
Elemental Analyses ◽  
Silicon And Germanium ◽  
Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

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