Self-organization of large-area periodic nanowire arrays by glancing incidence ion bombardment of CaF2(111) surfaces

2001 ◽  
Vol 19 (4) ◽  
pp. 1829-1834 ◽  
Author(s):  
Matthias Batzill ◽  
François Bardou ◽  
Ken J. Snowdon
Keyword(s):  
Ion Bombardment ◽  
Nanowire Arrays ◽  
Self Organization ◽  
Large Area

Electrochemical pore filling strategy for controlled growth of magnetic and metallic nanowire arrays with large area uniformity

2016 ◽  
Vol 27 (27) ◽  
pp. 275605 ◽  
Author(s):  
M Arefpour ◽  
M Almasi Kashi ◽  
A Ramazani ◽  
A H Montazer
Keyword(s):  
Nanowire Arrays ◽  
Controlled Growth ◽  
Large Area ◽  
Pore Filling

Plasmo-photonic nanowire arrays for large-area surface-enhanced Raman scattering sensors

2010 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Orest J. Glembocki ◽  
Ronald W. Rendell ◽  
Sharka M. Prokes ◽  
James P. Long ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Surface Enhanced Raman Scattering ◽  
Nanowire Arrays ◽  
Large Area ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering

scholarly journals Formation of Highly Ordered Platinum Nanowire Arrays on Silicon via Laser-Induced Self-Organization

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1031
Author(s):  
Michael Dasbach ◽  
Hendrik M. Reinhardt ◽  
Norbert A. Hampp
Keyword(s):  
Thin Films ◽  
Nanowire Arrays ◽  
Surface Structures ◽  
Self Organization ◽  
Periodic Patterns ◽  
Periodic Surface ◽  
Platinum Nanowires ◽  
Nanosecond Pulsed Laser ◽  
Sputter Deposited ◽  
20 Nm

Laser-induced periodic surface structures (LIPSS) provide an elegant solution for the generation of highly ordered periodic patterns on the surface of solids. In this study, LIPSS are utilized for the formation of periodic platinum nanowire arrays. In a process based on laser-stimulated self-organization, platinum thin films, sputter-deposited onto silicon, are transformed into nanowire arrays with an average periodicity of 538 nm. The width of the platinum nanowires is adjustable in a range from 20 nm to 250 nm by simply adjusting the thickness of the initial platinum thin films in a range from 0.3 nm to 4.3 nm. With increasing width, platinum nanowires show a rising tendency to sink into the surface of the silicon wafer, thus indicating alloying between platinum and silicon upon LIPSS-formation by a nanosecond-pulsed laser. The Pt/silicon wires may be etched away, leaving a complementary nanostructure in the silicon surface.

Self-organization of polymer nanoneedles into large-area ordered flowerlike arrays

2009 ◽  
Vol 95 (9) ◽  
pp. 091902 ◽  
Author(s):  
Dong Wu ◽  
Qi-Dai Chen ◽  
Bin-Bin Xu ◽  
Jian Jiao ◽  
Ying Xu ◽  
...  
Keyword(s):  
Self Organization ◽  
Large Area

scholarly journals Uniform Large-Area Free-Standing Silver Nanowire Arrays on Transparent Conducting Substrates

2016 ◽  
Vol 163 (8) ◽  
pp. D447-D452 ◽  
Author(s):  
Yuyi Feng ◽  
Kwang-Dae Kim ◽  
Clayton A. Nemitz ◽  
Paul Kim ◽  
Thomas Pfadler ◽  
...  
Keyword(s):  
Silver Nanowire ◽  
Nanowire Arrays ◽  
Large Area ◽  
Free Standing ◽  
Transparent Conducting

Facile Growth of Functional Perovskite Oxide Nanowire Arrays by Hybrid Physical-Chemical Techniques

2015 ◽  
Vol 1751 ◽  
Author(s):  
Corisa Kons ◽  
Anuja Datta
Keyword(s):  
Low Cost ◽  
Ferroelectric Properties ◽  
Rf Sputtering ◽  
Nanowire Arrays ◽  
Perovskite Oxide ◽  
Structure Property ◽  
Large Area ◽  
Oriented Growth ◽  
Physical Chemical ◽  
Seed Layers

ABSTRACTA generalized route encompassing a facile hybrid physical/chemical approach is reported for fabricating size and shape selective nanowires of technologically important ferroelectric perovskite oxides (Pb(Zr0.52Ti0.48)O3 (PZT) and Pb-free ZnSnO3) on industrially feasible large-area substrates. The approaches involve depositing nano-seed layers (50 - 100 nm in thickness) of the desired materials (Ti for PZT and ZnO for ZnSnO3) by pulsed laser deposition and RF sputtering techniques followed by oriented growth of nanowire arrays of these materials by solvothermal processes by varying solvent compositions and ratios. Similar crystal symmetry between the seed-layers facilitated the growth of well-aligned nanowire arrays of the targeted materials homogeneously on the substrates with a high packing density. Measurements of the electronic (field-emission), and ferroelectric properties of the materials are performed and discussed in terms of understanding their potential for future technological applications. The facile, low-cost method for fabricating high quality nanowires may expand the outreach of probes for understanding the structure-property relations in other perovskite materials.

Fabrication of Large-Area Silicon Nanowire Arrays Based on Electroless Metal Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng
Keyword(s):  
Reaction Time ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Metal Deposition ◽  
Wire Diameter ◽  
Nanowire Arrays ◽  
Metal Particles ◽  
Large Area ◽  
Average Growth ◽  
Silicon Nanowire Arrays

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5～0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.

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