Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure

2001 ◽  
Vol 19 (1) ◽  
pp. 64 ◽  
Author(s):  
Xia Sheng ◽  
Akira Kojima ◽  
Takuya Komoda ◽  
Nobuyoshi Koshida
Keyword(s):  
Electron Emission ◽  
Multilayer Structure ◽  
Polycrystalline Silicon ◽  
Cold Electron ◽  
Porous Polycrystalline

Electron emission characteristics of the porous polycrystalline silicon diode

2002 ◽  
Vol 2 (3) ◽  
pp. 233-235 ◽  
Author(s):  
Hoon Kim ◽  
Jong-Won Park ◽  
Joo-Won Lee ◽  
Yun-Hi Lee ◽  
Yoon-Ho Song ◽  
...  
Keyword(s):  
Electron Emission ◽  
Polycrystalline Silicon ◽  
Emission Characteristics ◽  
Silicon Diode ◽  
Porous Polycrystalline

Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrate

2000 ◽  
Vol 638 ◽  
Author(s):  
Takuya Komoda ◽  
Tsutomu Ichihara ◽  
Yoshiaki Honda ◽  
Koichi Aizawa ◽  
Nobuyoshi Koshida
Keyword(s):  
Electron Emission ◽  
Silicon Substrate ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Ballistic Electron ◽  
Porous Polycrystalline ◽  
Polysilicon Layer

AbstractIt is demonstrated that a porous polycrystalline silicon (PPS) film is useful as a ballistic electron emitter for excitation source of a flat panel display. A 1.5 µ m polysilicon layer is deposited on a silicon substrate by Low Pressure Chemical Vapour Deposition (LPCVD) technique and subsequently anodised in an ethanoic HF solution and oxidised in a Rapid Thermal Oxidation (RTO) furnace. A thin Au film is deposited onto the RTO-treated PPS layer and used as a top electrode. The electron emission current Ie and the diode current Ips are measured as a function of the bias voltage Vps. Electron emission of which onset voltage is about 8 V rapidly increases with increasing Vps. The Ie value reaches about 2 mA/cm2 for Vps= 20 V at which the emission efficiency defined as Ie/Ips is about 1 %. The emission mechanism has also been investigated in terms of the correlation between the emitted electron energy and the structure of PPS layer. The observed energy distribution curve of output electrons suggests that the PPS layer acts as a ballistic transport medium and the emission occurs based on multiple tunnelling through silicon nanocrystallites. The PPS layer is also formed on the polysilicon layer deposited on a glass substrate by Plasma Enhanced Chemical Vapour Deposition (PCVD) technique. In this case, the film is treated by an electrochemical oxidation (ECO) in an H2SO4 solution. Similar emission characteristics are observed, although the emission current is lower than that formed on silicon substrate. We also demonstrate the 2.6 inches diagonal 53×40 pixels multicolour flat panel display. We name it ballistic electron surface-emitting display device (BSD). BSD shows the possible application to the future flat panel display.

scholarly journals Centers of cold electron emission from molybdenum thin films

2021 ◽  
Vol 1851 (1) ◽  
pp. 012022
Author(s):  
I S Bizyaev ◽  
V S Osipov ◽  
V Ye Babyuk ◽  
A I Struchkov ◽  
N M Gnuchev
Keyword(s):  
Thin Films ◽  
Electron Emission ◽  
Cold Electron

scholarly journals Response of a Cold-Electron Bolometer on THz Radiation from a Long YBa2Cu3O7−δ Bicrystal Josephson Junction

2020 ◽  
Vol 10 (21) ◽  
pp. 7667
Author(s):  
Leonid Revin ◽  
Andrey Pankratov ◽  
Anna Gordeeva ◽  
Dmitry Masterov ◽  
Alexey Parafin ◽  
...  
Keyword(s):  
Josephson Junction ◽  
Traveling Wave ◽  
Multilayer Structure ◽  
Thz Radiation ◽  
Cold Electron ◽  
Dipole Antennas ◽  
Si Substrate ◽  
Wave Regime ◽  
Evaporation Technique ◽  
Shadow Evaporation

The response of the Cold-Electron Bolometers (CEBs), integrated into a 2-D array of dipole antennas, has been measured by irradiation from YBa2Cu3O7−δ (YBCO) 50 μm long Josephson junction into the THz region at frequencies from 0.1 to 0.8 THz. The possibility of controlling the amplitude-frequency characteristic is demonstrated by the external magnetic field in the traveling wave regime of a long Josephson junction. The YBCO junction has been formed on the bicrystal Zr1−xYxO2 (YSZ) substrate by magnetron sputtering and etching of the film. CEBs have been fabricated using an Al multilayer structure by a self-aligned shadow evaporation technique on Si substrate. Both receiver and oscillator have been located inside the same cryostat at 0.3 K and 2.7 K plates, respectively.

Quasi-Ballistic Stable Electron Emission from Porous Silicon Cold Cathodes

1998 ◽  
Vol 509 ◽  
Author(s):  
X. Sheng ◽  
N. Koshida
Keyword(s):  
Porous Silicon ◽  
Electron Scattering ◽  
Electron Emission ◽  
High Performance ◽  
Cold Electron ◽  
Cold Cathodes ◽  
Microelectronic Technology ◽  
Vacuum Microelectronic ◽  
Free Behavior ◽  
Electron Emitters

AbstractBased on the previously-reported porosity multilayer technique, cold electron emission properties of porous silicon (PS) electroluminescent diodes with a structure of Au/PS/n-type Si are further improved by introducing a graded-band multilayer structure. It is shown that electrons are quasiballisticly emitted from PS diodes owing to a significantly reduced electron scattering in PS layer. As a result, the emission current shows a fluctuation-free behavior. These observations are very important for both understanding the electron transport in PS and developing high performance electron emitters in application to vacuum microelectronic technology.

High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode

2016 ◽  
Vol 208 ◽  
pp. 174-179 ◽  
Author(s):  
Junying Zhang ◽  
Chunqian Zhang ◽  
Shouming Wu ◽  
Jun Zheng ◽  
Yuhua Zuo ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Lithium Ion ◽  
Porous Polycrystalline ◽  
Silicon Particles
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