Two-Dimensional Impurity States in an n-Type Inversion Layer of Silicon

1972 ◽  
Vol 9 (2) ◽  
pp. 754-757 ◽  
Author(s):  
Nobuo Kotera ◽  
Yoshifumi Katayama ◽  
Isao Yoshida ◽  
Kiichi F. Komatsubara
Keyword(s):  
Inversion Layer ◽  
Two Dimensional ◽  
Impurity States

Influence of the Spin–Orbit Interaction on the Magnetotransport Properties of a Two-Dimensional Electron System

SPIN ◽  
2015 ◽  
Vol 05 (03) ◽  
pp. 1530003
Author(s):  
R. Cangas ◽  
M. A. Hidalgo
Keyword(s):  
Classical Model ◽  
Inversion Layer ◽  
Quantum Hall ◽  
Electron System ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Quantum Hall Regime ◽  
Hall Regime ◽  
Dimensional Electron System

In this paper, we review the contribution of the Rashba spin–orbit coupling to the magnetoconduction of a two-dimensional electron system (2DES) confined in an inversion layer under quantum Hall regime (low temperature and low defects and impurities). The study is based on a semi-classical model for the magnetoconductivities of the 2DES. This model reproduces the measurements of the Shubnikov-de Haas (SdH) oscillations obtained in systems confined in III–V heterostructures, and also the quantum Hall magnetoconductivity (magnetoresistivity). We also discuss the Rashba and Zeeman competition and its effect on the magnetoconductivity.

The Anderson transition

1975 ◽  
Vol 345 (1641) ◽  
pp. 169-205 ◽  
Keyword(s):  
Electrical Properties ◽  
Fermi Energy ◽  
Inversion Layer ◽  
Two Dimensional ◽  
Layer System ◽  
Metal Insulator Transition ◽  
Mobility Edge ◽  
Metal Insulator ◽  
Anderson Transition ◽  
Extended States

An outline is given of the electrical properties expected in a disordered solid or fluid which shows a metal-insulator transition of Anderson type. This is one in which the Fermi energy of the electrons passes through a mobility edge separating extended states from states localized by disorder, as the composition or some other parameter is changed. Some of the experimental evidence for this kind of transition is described. In particular, a relatively detailed account is given of the two dimensional inversion layer system in which the relevant parameters may be varied in a single device by direct electrical means.

Two-dimensional magnetoplasmon in the silicon inversion layer

1977 ◽  
Vol 24 (4) ◽  
pp. 273-277 ◽  
Author(s):  
T.N. Theis ◽  
J.P. Kotthaus ◽  
P.J. Stiles
Keyword(s):  
Inversion Layer ◽  
Two Dimensional
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