Residual Resistivity and Electron Mean Free Path in Indium Thin Films

1970 ◽  
Vol 7 (2) ◽  
pp. 366-367
Author(s):  
M. M. Garland
Keyword(s):  
Thin Films ◽  
Free Path ◽  
Mean Free Path ◽  
Residual Resistivity ◽  
Electron Mean Free Path

scholarly journals Phonon residual resistance of pure crystals

2015 ◽  
Vol 29 (29) ◽  
pp. 1550206
Author(s):  
A. I. Agafonov
Keyword(s):  
Electric Field ◽  
Constant Electric Field ◽  
Finite Thickness ◽  
Mean Free Path ◽  
Residual Resistivity ◽  
Boltzmann Transport ◽  
Residual Resistance ◽  
Temperature Resistance ◽  
Electron Mean Free Path ◽  
The Ideal

In this paper, using the Boltzmann transport equation, we study the zero temperature resistance of perfect metallic crystals of a finite thickness d along which a weak constant electric field E is applied. This resistance, hereinafter referred to as the phonon residual resistance, is caused by the inelastic scattering of electrons heated by the electric field, with emission of long-wave acoustic phonons and is proportional to [Formula: see text]. Consideration is carried out for Cu, Ag and Au perfect crystals with the thickness of about 1 cm, in the fields of the order of 1 mV/cm. Following the Matthiessen rule, the resistance of the pure crystals, the thicknesses of which are much larger than the electron mean free path is represented as the sum of both the impurity and phonon residual resistances. The condition on the thickness and field is found at which the low-temperature resistance of pure crystals does not depend on their purity and is determined by the phonon residual resistivity of the ideal crystals. The calculations are performed for Cu with a purity of at least 99.9999%.

Interplay Between Thermoelectric and Thermionic Effects in Heterostructures

2000 ◽  
Author(s):  
Taofang Zeng ◽  
Gang Chen
Keyword(s):  
Film Thickness ◽  
Free Path ◽  
Thermionic Emission ◽  
Approximate Solutions ◽  
Mean Free Path ◽  
Boltzmann Transport ◽  
Thermoelectric Effects ◽  
Double Heterojunction ◽  
The Mean ◽  
Electron Mean Free Path

Abstract When electrons sweep through a double-heterojunction structure, there exist thermionic effects at the junctions and thermoelectric effects in the film. While both thermoelectric and thermionic effects have been studied for refrigeration and power generation applications separately, their interplay in heterostructures is not understood. This paper establishes a unified model including both thermionic and thermoelectric processes based on the Boltzmann transport equation for electrons, and the nonequilibrium interaction between electrons and phonons. Approximate solutions are obtained, leading to the electron temperature and Fermi level distributions inside heterostructures and discontinuities at the interfaces as a consequence of the highly nonequilibrium transport when the film thickness is much smaller than the electron mean free path. It is found that when the film thickness is smaller than the mean free path of electrons, the transport of electrons is controlled by thermionic emission. The coexistence of thermoelectric and thermionic effects may increase the power factor when the electron mean free path is comparable to the film thickness.

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