The Initial Stages of Growth of a Metal Film on a Single-Crystal Metal Substrate

1969 ◽  
Vol 6 (4) ◽  
pp. 475-479 ◽  
Author(s):  
E. Grünbaum ◽  
G. Kremer ◽  
C. Reymond
Keyword(s):  
Single Crystal ◽  
Metal Film ◽  
Metal Substrate ◽  
Stages Of Growth

Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide

2018 ◽  
Vol 60 (10) ◽  
pp. 2091-2096
Author(s):  
A. V. Tumarkin ◽  
M. V. Zlygostov ◽  
I. T. Serenkov ◽  
V. I. Sakharov ◽  
V. V. Afrosimov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Barium Zirconate ◽  
Stages Of Growth ◽  
Barium Zirconate Titanate ◽  
Barium Stannate ◽  
Zirconate Titanate ◽  
Single Crystal Sapphire

Growth of self-aligned single-crystal vanadium carbide nanosheets with a controllable thickness on a unique staked metal substrate

2020 ◽  
Vol 499 ◽  
pp. 143998
Author(s):  
Chitengfei Zhang ◽  
Zegao Wang ◽  
Rong Tu ◽  
Mingdong Dong ◽  
Jun Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vanadium Carbide ◽  
Metal Substrate

Tem Observations of Interfacial Defects in Mocvd GaAs on Single Crystal Ge Substrates

1998 ◽  
Vol 4 (S2) ◽  
pp. 626-627
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Thermal Expansion ◽  
Solar Cell ◽  
Physical Properties ◽  
Single Crystal ◽  
High Efficiency ◽  
Lattice Parameter ◽  
High Quality ◽  
Stages Of Growth ◽  
Interfacial Defects ◽  
Microstructural Defects

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.

Early stages of growth of epitactic barium bismuth oxide films on single-crystal MgO

1991 ◽  
Vol 113 (3-4) ◽  
pp. 716-721 ◽  
Author(s):  
M.G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Single Crystal ◽  
Bismuth Oxide ◽  
Oxide Films ◽  
Stages Of Growth ◽  
Early Stages ◽  
Barium Bismuth

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

2013 ◽  
Vol 740-742 ◽  
pp. 91-94 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Yu Yang ◽  
Rafael Dalmau ◽  
Baxter Moody ◽  
H. Spalding Craft ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Gradient ◽  
Vapor Transport ◽  
Threading Dislocation ◽  
Extended Defects ◽  
Stages Of Growth ◽  
Axis Rotation ◽  
Generation Mechanisms ◽  
Edge Dislocations ◽  
Dislocation Walls

A systematic study on the density and distribution of extended defects in a typical single crystal AlN boule grown by the physical vapor transport (PVT) method has been carried out in order to gain a detailed understanding of the formation of defects such as dislocations and low angle grain boundaries (LAGBs). Boule surface studies reveal that LAGBs are nucleated during initial stages of growth and propagate to the end of growth. Basal plane dislocations (BPDs) are generated during growth due to thermal gradient stresses. Higher BPD densities are found near the LAGBs at the boule edges due to additional stresses from constrained growth. Threading edge dislocations (TEDs) are typically replicated from the seed, and LAGBs composed of arrays of threading dislocation walls are formed to accommodate the c-axis rotation between different groups of threading screw dislocation (TSD) mediated growth centers.

scholarly journals Growth of Single Crystal Tungsten Nanorods by Oblique Angle Sputter Deposition

2003 ◽  
Vol 788 ◽  
Author(s):  
Tansel Karabacak ◽  
Pei-I Wang ◽  
Gwo-Ching Wang ◽  
Toh-Ming Lu
Keyword(s):  
Single Crystal ◽  
Normal Incidence ◽  
Sputter Deposition ◽  
Oblique Angle Deposition ◽  
Oblique Angle ◽  
Stages Of Growth ◽  
Β Phase ◽  
Α Phase ◽  
Shadowing Effect ◽  
Diffraction Patterns

ABSTRACTWe report the creation of single crystal tungsten nanorods with unusual simple cubic β-phase. These novel nano-structures were grown by oblique angle sputter deposition with substrate rotation through a shadowing effect. Transmission electron microscopy (TEM) diffraction patterns from individual nanorods clearly show the single crystal structure. It is evident from TEM diffraction measurements, during the oblique angle deposition, both β-phase W(100) and α-phase W(110) islands exist at the initial stages of growth. However, at later stages of the growth the β-phase structure dominates. This is in contrast to the sputter deposition at normal incidence where only the thermodynamically stable bcc α-phase W(110) polycrystalline films were formed when the film grew to a certain thickness. We explain our results by using the shadowing and adatom mobility mechanisms: At the initial stages of growth, the β-phase W(100) islands grow taller due to the lower adatom mobility on these islands. The taller β-phase W(100) islands survive in the competition during oblique angle growth and form isolated nanorods in the later stages, while the shorter α-phase W(110) islands stop growing due to the shadowing effect. In addition, our Monte Carlo simulation results agree well with the experimental measurements.

Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni–Mn–C System

2005 ◽  
Vol 22 (2) ◽  
pp. 478-481 ◽  
Author(s):  
Xu Bin ◽  
Cui Jian-Jun ◽  
Li Mu-Sen ◽  
Li Cheng-Mei ◽  
Chu Fu-Min ◽  
...  
Keyword(s):  
Single Crystal ◽  
Metal Film ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Diamond Single Crystal
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