Structural and electrical properties of chemical vapor deposited diamond films doped by B[sup +] implantation

2000 ◽  
Vol 18 (4) ◽  
pp. 1997
Author(s):  
S. B. Wang ◽  
H. X. Zhang ◽  
P. Zhu ◽  
K. Feng
Keyword(s):  
Electrical Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Structural And Electrical Properties

Electrical Properties in Cvd Diamond Films

1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Average Distance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Time Resolved ◽  
Chemical Vapor Deposited ◽  
Natural Type ◽  
Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

scholarly journals High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

2015 ◽  
Vol 60 (4) ◽  
pp. 2535-2542 ◽  
Author(s):  
P. Kula ◽  
W. Szymański ◽  
Ł. Kołodziejczyk ◽  
R. Atraszkiewicz ◽  
K. Dybowski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Vapor ◽  
High Strength ◽  
Growth Mechanisms ◽  
Key Factors ◽  
Mechanical And Electrical Properties ◽  
Chemical Vapor Deposited ◽  
Graphene Flakes

In this work, the growth mechanisms of chemical vapor deposited and metallurgical graphene and their selected mechanical and electrical properties were investigated. The study revealed the influence of the growth mechanisms on monoand poly-crystalline nanostructures of synthesized graphene monolayers. The structure of flake boundaries greatly affects both the mechanical and electrical properties. The key factors are overlapping of the graphene flakes, their degree of mismatch and the presence of π type bonds. All of these issues should be taken into account when developing industrially scaled technologies for graphene manufacturing.

Sign in / Sign up

Export Citation Format

Share Document