Phase Transformations During High-Speed, High-Temperature Scratching of Silicon

2017 ◽  
Author(s):  
Chirag Alreja ◽  
Sathyan Subbiah
Keyword(s):  
Phase Transformations ◽  
High Speed ◽  
Room Temperature ◽  
Diamond Tool ◽  
Elastic Recovery ◽  
Diamond Turning ◽  
Higher Temperature ◽  
Loading And Unloading ◽  
P Type ◽  
Transformation Study

Higher temperature assisted processing of silicon, such as in heat-assisted diamond turning, is often being considered to improve surface integrity. At higher temperatures and under mechanical loading and unloading, caused by the moving tool, silicon deforms plastically often in association with occurrence of phase transformations. This paper investigates such phase transformations in rotational scratching of single crystal (100) p-type silicon with a conical diamond tool under various furnace-controlled temperatures ranging from room temperature to 500 °C and at scratching speeds comparable to that used in the diamond turning process (1 m/s). Phase transformation study, using Raman spectroscopy, at various crystal orientations, show differences in phases formed at various temperatures when compared to that reported in indentation. The tendency to form phases is compared between scratched and diamond turned surfaces at room temperature, and also with that reported at low scratching speeds in the literature. Analysis of depths of the scratched groove indicates that that at temperatures beyond a certain threshold, plastic deformation and significant elastic recovery may be causing shallow grooves. This study is expected to help tune heat-assisted diamond turning conditions to improve surface formation.

Low Pressure Phase Transformations During High-Speed, High-Temperature Scratching of Silicon

2018 ◽  
Vol 6 (4) ◽  
Author(s):  
Chirag Alreja ◽  
Sathyan Subbiah
Keyword(s):  
Phase Transformations ◽  
High Speed ◽  
Room Temperature ◽  
Elastic Recovery ◽  
Diamond Turning ◽  
Higher Temperature ◽  
Loading And Unloading ◽  
P Type ◽  
Transformation Study ◽  
Pressure Phase

Higher temperature assisted processing of silicon, such as heat-assisted diamond turning, is often being considered to improve surface integrity. At higher temperatures and under mechanical loading and unloading, caused by a moving tool, silicon deforms plastically often in association with occurrence of phase transformations. This paper investigates such phase transformations in rotational scratching of single crystal (100) p-type silicon with a conical diamond tool under various furnace-controlled temperatures ranging from room temperature (RT) to 500 °C and at scratching speeds comparable to that used in the diamond turning process (1 m/s). Phase transformation study, using Raman spectroscopy, at various crystal orientations, shows differences in phases formed at various temperatures when compared to that reported in indentation. The tendency to form phases is compared between scratched and diamond turned surfaces at RT, and also with that reported at low scratching speeds in the literature. Analytical indenting-based pressure calculations show that at higher temperatures, phase transformations can happen in silicon at significantly lower pressures. Analysis of depths of the scratched groove indicates that at temperatures beyond a certain threshold, plastic deformation and significant elastic recovery may be causing shallow grooves. Abrasive wear coefficients are thus seen to decrease with the increase in temperatures. This study is expected to help tune heat-assisted diamond turning conditions to improve surface formation.

Field Effect Transistors of BTQBT and its Derivatives

2002 ◽  
Vol 725 ◽  
Author(s):  
Masaki Takada ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Room Temperature ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Organic Transistors ◽  
Semiconducting Material ◽  
P Type

AbstractWe have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

On the Chemistry of Tetrabenzyl Thiuram Disulfide and Tetramethyl Thiuram Disulfide with Bis (Triethoxysilylpropyl) Tetrasulfide in Silica Compounds

2003 ◽  
Vol 76 (4) ◽  
pp. 876-891 ◽  
Author(s):  
R. N. Datta ◽  
A. G. Talma ◽  
S. Datta ◽  
P. G. J. Nieuwenhuis ◽  
W. J. Nijenhuis ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Succinic Anhydride ◽  
Dynamic Properties ◽  
The Other ◽  
Resonance Spectroscopy ◽  
Reaction Products ◽  
Negative Effect ◽  
Higher Temperature ◽  
Analytical Tools

Abstract The use of thiurams such as Tetramethyl thiuram disulfide (TMTD) or Tetrabenzyl thiuram disulfide (TBzTD) has been explored to achieve higher cure efficiency. The studies suggest that a clear difference exists between the effect of TMTD versus TBzTD. TMTD reacts with Bis (triethoxysilylpropyl) tetrasulfide (TESPT) and this reaction can take place even at room temperature. On the other hand, the reaction of TBzTD with TESPT is slow and takes place only at higher temperature. High Performance Liquid Chromatography (HPLC) with mass (MS) detection, Nuclear Magnetic Resonance Spectroscopy (NMR) and other analytical tools have been used to understand the differences between the reaction of TMTD and TESPT versus TBzTD and TESPT. The reaction products originating from these reactions are also identified. These studies indicate that unlike TMTD, TBzTD improves the cure efficiency allowing faster cure without significant effect on processing characteristics as well as dynamic properties. The loading of TESPT is reduced in a typical Green tire compound and the negative effect on viscosity is repaired by addition of anhydrides, such as succinic anhydride, maleic anhydride, etc.

Intrinsic n- and p-Type MgZnO Nanorods for Deep-UV Detection and Room-Temperature Gas Sensing

2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Uv Detection ◽  
Deep Uv ◽  
P Type

Preparation and Characterization of Sawdust Derived Bio-Fuel Pellets Depending on "Solid Bridge" Intertwining Action of Hyacinth Fiber

2014 ◽  
Vol 878 ◽  
pp. 450-458
Author(s):  
Ling Jun Kong ◽  
Xiong Fei Zhang ◽  
Shuang Hong Tian ◽  
Ting Liu ◽  
Ya Xiong
Keyword(s):  
Mechanical Properties ◽  
Room Temperature ◽  
Elastic Recovery ◽  
Impact Resistance ◽  
Resistance Index ◽  
Cost Effective ◽  
Environmental Benefits ◽  
Fuel Pellet ◽  
Mass Ratio ◽  
Solid Bridge

Densified biomass pellets named as H/S-BPs were prepared from waste wood sawdust (S) in the presence of water hyacinth fiber (H) as solid bridge under room temperature and 6 MPa lower than in the previous study. Mechanical properties including relaxed density (ρr), resiliency (R), abrasion resistance (AR) and impact resistance index (IRI) were evaluated. Results showed that adding H greatly reduced negative effect of resiliency on the mechanical properties of H/S-BPs during storage. For example, H/S-BPs compressed at 6 MPa in an H/S mass ratio of 1 to 3 presented lower resiliency of 10% and higher relaxed density of 1.04 kg dm-3 than pellets without H fiber. This is due to the intertwining action of H fiber, what fabricates solid bridge, replacing the bonding creating by applying high pressure to resist the disruptive force caused by elastic recovery. Thus, compression of waste H and S in a mass ratio of 1 to 3 at room temperature under 6 MPa is a cost-effective process to produce densified sustainable bio-fuel pellet as well as dispose waste S and H, combining the economical and environmental benefits.

scholarly journals Dynamical Spin Injection into p-Type Germanium at Room Temperature

2013 ◽  
Vol 6 (2) ◽  
pp. 023001 ◽  
Author(s):  
Mariko Koike ◽  
Eiji Shikoh ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Shinya Yamada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Dynamical Spin ◽  
P Type

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

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