scholarly journals Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

2020 ◽  
Author(s):  
Raj Sahu ◽  
Emre Gurpinar ◽  
Burak Ozpineci
Keyword(s):  
Thermal Loading ◽  
Base Plate ◽  
Heat Sinks ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Modules ◽  
Significant Temperature ◽  
Thermal Imbalance ◽  
Impact Reliability ◽  
Heat Spreading

Abstract Power semiconductor die layout in substrates used in power modules is generally optimized for minimum electrical parasitics (e.g., stray inductance) by considering the minimum spacing between dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. For module designs using a direct substrate cooling method, the base plate is removed, leading to a steady-state thermal asymmetry in the power module due to insufficient heat spreading/transfer. This causes significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to undesirable asymmetries in power conversion among semiconductor devices, which impact reliability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

scholarly journals Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

2021 ◽  
Author(s):  
Raj Sahu ◽  
Emre Gurpinar ◽  
Burak Ozpineci
Keyword(s):  
Thermal Loading ◽  
Cooling System ◽  
Wide Bandgap ◽  
Heat Sinks ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Modules ◽  
Significant Temperature ◽  
Thermal Imbalance ◽  
Heat Spreading

Abstract Power semiconductor die placement on substrates used in high-power modules is generally optimized to minimize electrical parasitic (e.g., stray inductance, common-mode capacitance), taking into account the minimum spacing between semiconductor dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. Insulated metal substrate-based power module designs may lead to asymmetrical thermal resistance across the dies, which may cause significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to over sizing the cooling system design or under-using the semiconductor power processing capability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

Novel Materials and Joinings for Power Electronics Module Packaging

2001 ◽  
Vol 682 ◽  
Author(s):  
Eckhard Wolfgang ◽  
Gerhard Mitic ◽  
Guy Lefranc ◽  
Herbert Schwarzbauer
Keyword(s):  
Power Electronics ◽  
Electric Fields ◽  
Silver Powder ◽  
Base Plate ◽  
Amorphous Coating ◽  
Matrix Composites ◽  
Power Semiconductor ◽  
Power Modules ◽  
Passivation Layers ◽  
High Electric Fields

ABSTRACTPower electronics modules consist of several layers of different materials according to their function. A base plate is necessary for mounting the module to the cooling unit, an insulating layer provides protection against high voltages, the power semiconductor chips with metal electrodes on both sides are used for switching currents, and finally passivation layers have to protect the chips against high electric fields and environmental impacts. The combination of semiconductors, metals and insulators and their different coefficients of thermal expansion leads to stresses and fatigue during temperature excursions. Some major trends require the use of new materials and joinings: higher voltages (up to 6.5 kV), higher currents (above 2000 A), and higher operating temperatures, e.g. in automotive applications (up to 200°C). To reduce the influence of the thermal mismatch between the base plate and the insulator (Alumina, AlN), metal matrix composites such as AlSiC have been used for several years in power modules. To minimize the partial discharge of the ceramics substrate, an amorphous coating (a-Si:H) was tested at high voltages up to 15 kV. A low-temperature joining technique based on silver powder processed under high pressure and at low temperatures works well at higher temperatures. Finally a concept for securing reliability is discussed.

THERMAL VALIDATIONS OF ADDITIVE MANUFACTURED NON-METALLIC HEAT SPREADING DEVICE FOR HOT SPOT MITIGATION IN POWER MODULES

2019 ◽  
Vol 2019 (1) ◽  
pp. 000398-000403 ◽  
Author(s):  
Reece Whitt ◽  
David Huitink
Keyword(s):  
Power Electronics ◽  
Thermal Management ◽  
Hot Spots ◽  
Hot Spot ◽  
Electronic System ◽  
Heat Sinks ◽  
Power Module ◽  
Custom Made ◽  
Cold Plates ◽  
Heat Spreading

Abstract As energy demands and power electronics density scale concurrently, reliability of such devices is being challenged. Inadequate thermal management can cause system-wide failures due to thermal run-away, thermal expansion induced stresses, interconnect fractures and many more. Conventional techniques used to cool devices consist of heavy, metallic systems such as cold plates and large heat sinks, which can significantly reduce the overall system power density. Moreover, the manufacturing of such components is expensive and often requires custom-made cold plates for improved integration with the electronic system. Although used as a standard practice, these metallic thermal management systems have the potential to intensify electro-magnetic interference (EMI) when coupling with high frequency switching power electronics, and the material density increases the weight of the system, which is detrimental in mobile applications. Lastly, cold plates and heat sinks can create non-uniform cooling profiles in the electronics due to the insufficient management of hot-spots. To combat these drawbacks, a new heat spreader design has been proposed which reduces weight and EMI effects while eliminating hot-spots through localized fluid impingement. This current study describes the methodology and construction of the experimental test setup to characterize the performance of the heat spreading device compared to an off-the-shelf cold plate. Through infrared imagining, the viability of two heated test sections are evaluated in their ability to replicate power module temperature profiles during operation.

Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices

2015 ◽  
Vol 12 (3) ◽  
pp. 153-160 ◽  
Author(s):  
Takeshi Anzai ◽  
Yoshinori Murakami ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kohei Hiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Cycle ◽  
Coefficient Of Thermal Expansion ◽  
Fabrication Process ◽  
Power Module ◽  
Ceramic Substrates ◽  
Soldering Temperature ◽  
Power Semiconductor ◽  
Power Modules ◽  
High Temperature Operation

This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.

A Novel Two-phase Soft Starter Used for Three-phase Asynchronous Motors

2020 ◽  
Vol 13 (8) ◽  
pp. 1175-1182
Author(s):  
Jingwen Chen ◽  
Hongshe Dang
Keyword(s):  
Pulse Generation ◽  
Power Module ◽  
Two Phase ◽  
Power Semiconductor ◽  
Starting Current ◽  
Semiconductor Switches ◽  
Soft Starter ◽  
Three Phase ◽  
And Control ◽  
Driving Circuit

Background: Traditional thyristor-based three-phase soft starters of induction motor often suffer from high starting current and heavy harmonics. Moreover, both the trigger pulse generation and driving circuit design are usually complicated. Methods: To address these issues, we propose a novel soft starter structure using fully controlled IGBTs in this paper. Compared to approaches of traditional design, this structure only uses twophase as the input, and each phase is controlled by a power module that is composed of one IGBT and four diodes. Results: Consequently, both driving circuit and control design are greatly simplified due to the requirement of fewer controlled power semiconductor switches, which leads to the reduction of the total cost. Conclusion: Both Matlab/Simulink simulation results and experimental results on a prototype demonstrate that the proposed soft starter can achieve better performances than traditional thyristorbased soft starters for Starting Current (RMS) and harmonics.

Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

2005 ◽  
Vol 128 (3) ◽  
pp. 267-272 ◽  
Author(s):  
Hua Ye ◽  
Harry Efstathiadis ◽  
Pradeep Haldar
Keyword(s):  
Liquid Nitrogen ◽  
Electrical Current ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Electronic Systems ◽  
Power Module ◽  
Power Modules ◽  
Allowable Range ◽  
Liquid Nitrogen Cooling ◽  
Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module

2021 ◽  
Author(s):  
Hayden Carlton ◽  
John Harris ◽  
Alexis Krone ◽  
David Huitink ◽  
Md Maksudul Hossain ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Heat Removal ◽  
Electrical Characterization ◽  
Thermal Characterization ◽  
Design Strategies ◽  
Power Module ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Power Modules ◽  
Primary Means

Abstract The need for high power density electrical converters/inverters dominates the power electronics realm, and wide bandgap semiconducting materials, such as gallium nitride (GaN), provide the enhanced material properties necessary to drive at higher switching speeds than traditional silicon. However, lateral GaN devices introduce packaging difficulties, especially when attempting a double-sided cooled solution. Herein, we describe optimization efforts for a 650V/30A, GaN half-bridge power module with an integrated gate driver and double-sided cooling capability. Two direct bonded copper (DBC) substrates provided the primary means of heat removal from the module. In addition to the novel topology, the team performed electrical/thermal co-design to increase the multi-functionality of module. Since a central PCB comprised the main power loop, the size and geometry of the vias and copper traces was analyzed to determine optimal functionality in terms of parasitic inductance and thermal spreading. Thermally, thicker copper layers and additional vias introduced into the PCB also helped reduce hot spots within the module. Upon fabrication of the module, it underwent electrical characterization to determine switching performance, as well as thermal characterization to experimentally measure the total module’s thermal resistance. The team successfully operated the module at 400 V, 30 A with a power loop parasitic inductance of 0.89 nH; experimental thermal measurements also indicated the module thermal resistance to be 0.43 C/W. The overall utility of the design improved commensurately by introducing simple, yet effective electrical/thermal co-design strategies, which can be applied to future power modules.

scholarly journals Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules

2019 ◽  
Author(s):  
Erick Gutierrez ◽  
Kevin Lin ◽  
Douglas DeVoto ◽  
Patrick McCluskey
Keyword(s):  
Thermal Cycling ◽  
Failure Modes ◽  
Rapid Determination ◽  
Degradation Process ◽  
In Situ Monitoring ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Die Attach ◽  
Power Modules

Abstract Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for high-power applications. Operation and environmental stresses can cause these power modules to progressively degrade over time, potentially leading to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization were performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment aimed to assess the potential damage effects of thermal cycling on the die attach, results indicated that wire bond degradation was the life-limiting failure mechanism.

Study on the Factors Influencing Spreading Resistance of Heat Sinks

2011 ◽  
Vol 301-303 ◽  
pp. 165-169
Author(s):  
Da Yong Gao ◽  
Jian Xin Zhang ◽  
Ping Juan Niu
Keyword(s):  
Heat Source ◽  
Heat Sink ◽  
Electronic Devices ◽  
Great Influence ◽  
Base Plate ◽  
Critical Value ◽  
Area Ratio ◽  
Heat Sinks ◽  
Spreading Resistance ◽  
Factors Influencing

The spreading resistance is a very important parameter in the applications of heat sink. The design of electronic devices will fail without considering the influence of the spreading resistance. In this paper, a simple thermal model was simulated by Computational Fluid Dynamics software. Some factors, which have great influence on the spreading resistance, have been analyzed. The spreading resistance decreases significantly with the increasing of the area ratio between the heat source and the base-plate. While the ratio being 1, the spreading resistance reaches the mix value. The greater the thermal conductivity of heat sink, the lower the spreading resistance. With the increasing of the thickness of base-plate, the spreading resistance reduces. However, if the thickness exceeds the critical value, the spreading resistance will increase. And the spreading resistance reaches the mix value while the centers of heat source and the base-plate are overlapped.

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