Correlated Effects of Self-Heating, Light Output, and Efficiency of GaN Light-Emitting Diodes on Junction Temperature

2019 ◽  
Author(s):  
Bikramjit Chatterjee ◽  
James Spencer Lundh ◽  
Daniel Shoemaker ◽  
Tae Kyoung Kim ◽  
Joon Seop Kwak ◽  
...  
Keyword(s):  
Light Output ◽  
Temperature Data ◽  
Junction Temperature ◽  
Multiple Quantum ◽  
Material System ◽  
Optical Performance ◽  
Forward Voltage ◽  
Self Heating ◽  
Environment Temperature ◽  
The Impact

Abstract With the advent of GaN as the major material system in the solid-state lighting industry — high power, high brightness LEDs with wavelength ranging from near UV to white are getting fabricated and part of a tremendously large and ever-increasing market. However, device self-heating and environment temperature significantly deteriorates the LED’s optical performance. Hence, it is extremely important to quantify the device self-heating and its impact on optical performance. In this work, three different characterization techniques were used to calculate temperature rise due to self-heating for an InGaN/GaN LED with 5 pairs of multiple quantum wells. The impact of self-heating and increased environment temperature on the device optical performance were also studied. Nanoparticle assisted Raman thermometry was used for the first time to measure the LED mesa surface temperature. The temperature measured using this technique was compared with temperature data obtained by using the forward voltage method and infrared (IR) thermography. The IR and Raman measurement results were in close agreement while the temperature data obtained from forward voltage method underestimated the temperature by 510%. It was also observed that due to environment temperature increase from 25°C to 100°C, LED optical power output drops by 12%.

Characterization of the Interdependence Between the Light Output and Self-Heating of Gallium Nitride Light-Emitting Diodes

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Bikramjit Chatterjee ◽  
James Spencer Lundh ◽  
Daniel Shoemaker ◽  
Tae Kyoung Kim ◽  
Hoyeon Kim ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Material System ◽  
Optical Performance ◽  
Characterization Methods ◽  
Light Emitting ◽  
Self Heating ◽  
Near Ultraviolet ◽  
Environment Temperature

Abstract With the advent of gallium nitride (GaN) as an enabling material system for the solid-state lighting industry, high-power and high-brightness light-emitting diodes (LEDs) with wavelengths ranging from near ultraviolet to blue are being manufactured as part of a tremendously large and ever-increasing market. However, device self-heating and the environment temperature significantly deteriorate the LED's optical performance. Hence, it is important to accurately quantify the LED's temperature and correlate its impact on optical performance. In this work, three different characterization methods and thermal simulation were used to measure and calculate the temperature rise of an InGaN/GaN LED, as a result of self-heating. Nanoparticle-assisted Raman thermometry was used to measure the LED mesa surface temperature. A transient Raman thermometry technique was utilized to investigate the transient thermal response of the LED. It was found that under a 300 mW input power condition, self-heating is negligible for an input current pulse width of 1 ms or less. The temperature measured using nanoparticle-assisted Raman thermometry was compared with data obtained by using the forward voltage method (FVM) and infrared (IR) thermal microscopy. The IR and Raman measurement results were in close agreement whereas the data obtained from the widely accepted FVM underestimated the LED temperature by 5–10%. It was also observed that an increase in environment temperature from 25 °C to 100 °C would degrade the LED optical power output by 12%.

Analysis of LED Driver Topologies with Respect to Power Factor and THD

2018 ◽  
pp. 63-68 ◽  
Author(s):  
Aniruddha Mukherjee ◽  
Trilok Chandra Bansal ◽  
Amit Soni
Keyword(s):  
Power Factor ◽  
Light Output ◽  
Input Power ◽  
Heat Sinks ◽  
Junction Temperature ◽  
Led Driver ◽  
Additional Heat ◽  
Excessive Heat ◽  
Current Input ◽  
The Impact

Light Emitting Diodes (LEDs) are fast replacing incandescent lamps and CFLs in most of the developing nations. The reason can be attributed mainly to the enhanced lifetime and less energy consumption as compared to the other mentioned types. However one important aspect needs attention, the impact of driver on LEDs. LEDs are current controlled devices and hence emit maximum light with increase in current input to the device. This feature, boost up the light output but it increases the junction temperature of the device. Hence additional heat sinks are required to vent out the excessive heat generated due to increase current input to the LEDs. Those additional heat sinks are at times difficult to accommodate. So, designers have made arrangements to vent out the heat from the device. This is achieved by designing fins. However this arrangement is not suitable in places where the ambient temperature is more than normal. Thus, design of LED driver with controlled current input is essential in order to maintain the thermal limit of the device. Secondly, the AC-DC LEDs driver circuits, which are available in the market, are seldom equipped with input power factor and THD improvement circuitry as prescribed in IEC61000– 3–2. This is essential for maintaining the energy efficiency of the nearest utility services and in addition also improves on the current drawn by the device. The following work envisages these issues and proposes corrective driver circuit based on two different driver topologies, buck-boost topology and flyback topology. Both these topologies are proposed in order to address the aspects of power quality and its impact on the life of the device. The simulation were done using Green Point simulation tool from On Semiconductors.

Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes

2002 ◽  
Vol 743 ◽  
Author(s):  
A. Sarua ◽  
M. Kuball ◽  
M. J. Uren ◽  
A. Chitnis ◽  
J. P. Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Self Heating ◽  
Micro Raman Spectroscopy ◽  
Heating Effects ◽  
Heat Sinking

ABSTRACTUltraviolet light emitting diodes (LED) based on GaN and its ternary alloy AlGaN are key devices for applications such as solid state white lighting and chemical sensing. Ultraviolet LEDs are prone to self-heating effects, i.e., temperature rises during operation, contributing significantly to the commonly observed saturation of light output power at relatively low input currents. Rather little, however, is known about the actual device temperature of an operating ultraviolet LED. Using micro-Raman spectroscopy temperature measurements were performed as a function of input current on 325nm-Al0.18Ga0.82N/Al0.12Ga0.88N multiple quantum wells LEDs grown on sapphire substrates, flip-chip mounted on SiC for heat-sinking. Temperature maps were recorded over the active device area. Temperature rises of about 65 °C were measured at input currents as low as 50mA (at 8V) for 200 μm x 200 μm size LEDs despite flipchip mounting the devices. Temperature rises at the device edges were found to be higher than in the device center, due to combined heat sinking and current crowding effects. Finite difference heat dissipation simulations were performed and compared to the experimental results.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

scholarly journals On the Spatial Patterns of Urban Thermal Conditions Using Indoor and Outdoor Temperatures

2021 ◽  
Vol 13 (4) ◽  
pp. 640
Author(s):  
Sadroddin Alavipanah ◽  
Dagmar Haase ◽  
Mohsen Makki ◽  
Mir Muhammad Nizamani ◽  
Salman Qureshi
Keyword(s):  
Heat Stress ◽  
Air Temperature ◽  
Temperature Data ◽  
Cold Spot ◽  
Temperature Pattern ◽  
Outdoor Temperature ◽  
Residential Units ◽  
Urban Settlements ◽  
The Impact ◽  
Indoor And Outdoor

The changing climate has introduced new and unique challenges and threats to humans and their environment. Urban dwellers in particular have suffered from increased levels of heat stress, and the situation is predicted to continue to worsen in the future. Attention toward urban climate change adaptation has increased more than ever before, but previous studies have focused on indoor and outdoor temperature patterns separately. The objective of this research is to assess the indoor and outdoor temperature patterns of different urban settlements. Remote sensing data, together with air temperature data collected with temperature data loggers, were used to analyze land surface temperature (outdoor temperature) and air temperature (indoor temperature). A hot and cold spot analysis was performed to identify the statistically significant clusters of high and low temperature data. The results showed a distinct temperature pattern across different residential units. Districts with dense urban settlements show a warmer outdoor temperature than do more sparsely developed districts. Dense urban settlements show cooler indoor temperatures during the day and night, while newly built districts show cooler outdoor temperatures during the warm season. Understanding indoor and outdoor temperature patterns simultaneously could help to better identify districts that are vulnerable to heat stress in each city. Recognizing vulnerable districts could minimize the impact of heat stress on inhabitants.

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

scholarly journals Light Output, Thermal Properties, and Reliability of Using Glass Phosphors in WLED Packages

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 239
Author(s):  
Chin-Chuan Huang ◽  
Tsung-Han Weng ◽  
Chun-Liang Lin ◽  
Yan-Kuin Su
Keyword(s):  
Thermal Properties ◽  
Yttrium Aluminum Garnet ◽  
Saturated Vapor ◽  
Light Output ◽  
Junction Temperature ◽  
Color Temperature ◽  
Light Emitting ◽  
Chromaticity Coordinate ◽  
White Light Emitting Diodes ◽  
Color Rendering

White-light-emitting diodes (WLED) based on yttrium aluminum garnet (YAG) phosphors sintered with glass (PiG) and with silicone (PiS) are compared in terms of their light properties, temperature properties and reliability.The complete YAG phosphor was doped with an encapsulant traditional WLED (PiS WLED), and the WLED was covered with PiG (PiG WLED). PiG was made by sintering glass powder and YAG phosphor at the ratio of 87:13 (%), and the correlated color temperature (CCT) was 5564 K. The CCT of the PiG WLED with the YAG doping concentration of 8.5 wt.% approximated 5649 K. The initial light output of the PiG WLED was 6.4% lower than that of the PiS WLED. Under 1008 h and 350 mA aging, PiG WLED and PiS WLED’ light output, CCT and color rendering index variation rates were all within 1%. In the saturated vapor-pressure test, no sample exhibited red ink infiltration, light nor peeling between the encapsulant and the lead-frame. Compared with that of the PiS WLED, the junction temperature of the PiG WLED reduced from 88.4 °C to 81.3 °C. Thermal resistance dropped from 37.4 °C/W to 35.6 °C/W. The PiG WLED presented a better CIE (Commission Internationale de l’Eclairage) 1931 chromaticity coordinate (x,y) concentration and thermal properties than the PiS WLED.

scholarly journals Innovative concepts for the usage of veneer-based hybrid materials in vehicle structures

2021 ◽  
pp. 146442072199839
Author(s):  
DB Heyner ◽  
G Piazza ◽  
E Beeh ◽  
G Seidel ◽  
HE Friedrich ◽  
...  
Keyword(s):  
Steel Strip ◽  
High Energy ◽  
The Body ◽  
Vehicle Body ◽  
Material System ◽  
Laminated Veneer Lumber ◽  
Hybrid Beam ◽  
Bending Load ◽  
The Impact ◽  
Very High

A promising approach for the development of sustainable and resource-saving alternatives to conventional material solutions in vehicle structures is the use of renewable raw materials. One group of materials that has particular potential for this application is wood. The specific material properties of wood in the longitudinal fiber direction are comparable to typical construction materials such as steel or aluminum. Due to its comparatively low density, there is a very high lightweight construction potential especially for bending load cases. Structural components of the vehicle body are exposed to very high mechanical loads in the case of crash impact. Depending on the component under consideration, energy has to be absorbed and the structural integrity of the body has to be ensured in order to protect the occupants. The use of natural materials such as wood poses particular challenges for such applications. The material characteristics of wood are dispersed, and depend on environmental factors such as humidity. The aim of the following considerations was to develop a material system to ensure the functional reliability of the component. The test boundary conditions for validation also play a key role in this context. The potential of wood–steel hybrid design based on laminated veneer lumber and steel was investigated for use in a component subjected to crash loads such as the door impact beam. The chosen solution involves a separation of functions. A laminated veneer lumber-based beam was hybridized with a steel strip on the tension side. The steel strip was designed to compensate the comparatively low elongation at fracture of the wood and to ensure the integrity of the beam. The wooden component was designed for high energy absorption due to delamination and controlled failure during the impact, while maintaining the surface moment of inertia, i.e. the bending stiffness of the entire component. This approach was chosen to ensure the functional safety of the component, avoid sudden component failure and utilize the high potential of both materials. The tests carried out provided initial functional proof of the chosen solution. The hybridization achieved significantly higher deformations without sudden failure of the beam. In addition, bending capabilities were increased significantly compared to a beam without hybridization. In comparison with a state-of-the-art steel beam, the hybrid beam was not able to achieve the maximum deformation and the target weight of the hybrid beam. Further optimization of the hybrid beam is therefore necessary.

Impact of donor compensation ratio on photorefractive two–wave mixing dynamics in multiple quantum wells structures

2014 ◽  
Vol 23 (03) ◽  
pp. 1450029 ◽  
Author(s):  
Błażej Jabłoński
Keyword(s):  
Quantum Wells ◽  
Concentration Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Compensation Ratio ◽  
Mixing Dynamics ◽  
Two Wave Mixing ◽  
Charge Field ◽  
The Impact

The kind of defects and their concentration have a significant impact on photorefractive phenomena taking place within the structure of semi-insulating GaAs / AlGaAs multiple quantum wells. In this paper, the impact of donor-to-acceptor concentration ratio on the grating in photorefractive two-waves mixing was examined. The formation of the space charge field for different defect concentrations as well as different external electric field intensities are analyzed.

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