Transparent Electrodes From Graphene/Single Wall Carbon Nanotube Composites

2013 ◽  
Author(s):  
Hossein Sojoudi ◽  
Fernando Reiter ◽  
Samuel Graham
Keyword(s):  
Electrical Properties ◽  
Sheet Resistance ◽  
Composite Films ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Single Layer Graphene ◽  
Atmospheric Conditions ◽  
Transparent Conductive Electrode ◽  
Nanotube Composites

A transparent conductive electrode comprised of alternating layers of graphene grown by chemical vapor deposition (CVD) and metallic single wall nanotubes (M-SWNTs) is presented. It was found that the addition of two single-layer graphene sheets enhances the conduction pathways in the M-SWNT film, yielding up to a 75% decrease in the sheet resistance with little sacrifice in the optical transmittance. Enhancements in the electrical properties of the films were made through a heat treatment process followed by nitric acid and thionyl chloride doping, yielding a sheet resistance of 70 Ω/sq with a transmittance of 78% at 550 nm. Composite films having undergone an annealing step were found to have stable electrical properties upon exposure to atmospheric conditions while doped films demonstrated limited stability.

Tuning the electrical properties of exfoliated graphene layers using deep ultraviolet irradiation

2014 ◽  
Vol 2 (27) ◽  
pp. 5404-5410 ◽  
Author(s):  
M. Z. Iqbal ◽  
M. F. Khan ◽  
M. W. Iqbal ◽  
Jonghwa Eom
Keyword(s):  
Electrical Properties ◽  
Ultraviolet Irradiation ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Graphene Bilayer ◽  
Graphene Layers ◽  
Exfoliated Graphene ◽  
Deep Ultraviolet ◽  
Trilayer Graphene ◽  
Unique Band

Deep ultraviolet irradiation tunes the electronic properties of mechanically exfoliated single-layer graphene, bilayer graphene, and trilayer graphene while maintaining their unique band structure and electrical properties.

Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire

ACS Nano ◽  
2010 ◽  
Vol 4 (12) ◽  
pp. 7407-7414 ◽  
Author(s):  
Hiroki Ago ◽  
Yoshito Ito ◽  
Noriaki Mizuta ◽  
Kazuma Yoshida ◽  
Baoshan Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Chemical Vapor Deposition Growth ◽  
Cobalt Film ◽  
Layer Graphene

Performance of single layer graphene obtain by chemical vapor deposition on gold electrodes

2019 ◽  
Vol 98 ◽  
pp. 107510 ◽  
Author(s):  
Bianca Tincu ◽  
Ioana Demetrescu ◽  
Andrei Avram ◽  
Vasilica Tucureanu ◽  
Alina Matei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Gold Electrodes ◽  
Layer Graphene

Chemical Vapor Deposited Graphene for Opto-Electronic Applications

2016 ◽  
Vol 39 ◽  
pp. 57-68
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Sarah Riazimehr ◽  
Stefan Wagner ◽  
Andreas Bablich ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Spectral Response ◽  
Single Layer ◽  
Chemical Vapor ◽  
Adsorbed Water ◽  
Single Layer Graphene ◽  
Ambient Conditions ◽  
Transfer Length ◽  
Type Silicon ◽  
P Type

In this work, fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon. Spectral response of graphene photodiodes is measured to be less than 0.2 mAW-1 which is attributed to the light absorbance of 2.3% for single layer graphene. Transfer length method device structures are also fabricated and contact resistance is calculated and plotted as a function of spacing between the contacts. The calculated contact resistance (RcW) is 0.87 kΩ.µm. The latter structures are also characterised under various ambient conditions, before and after annealing. The value of contact resistance reduces from 0.87 kΩ.µm to 0.75 kΩ.µm after annealing. This reduction is attributed to the improvement in bonding between graphene and metal. Measurements under vacuum show an increase in contact resistance which is attributed to the removal of adsorbed water molecules on the surface on graphene. The sheet resistivity of graphene is calculated to be between 1.17 kΩ/□ and 3.67 kΩ/□.

Oxidation of CVD Growth Single-Layer Graphene

2013 ◽  
Vol 790 ◽  
pp. 7-10 ◽  
Author(s):  
Hui Gao ◽  
Yin Zhang
Keyword(s):  
Vapor Deposition ◽  
Acid Treatment ◽  
Oxidation Process ◽  
Single Layer ◽  
Chemical Vapor ◽  
Strong Acid ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Potential Applications ◽  
Cvd Growth

Recently, oxidized chemical vapor deposition (CVD) growth graphene has drawn much attention due to its potential applications in the field of optoelectronics. In this article, we report a simple, scalable and efficient method to synthesize oxidized CVD growth single-layer graphene by the strong acid treatment. The results indicate that oxidation process successfully introduced more defects and oxygen-containing groups into the lattice of graphene.

Laser direct writing of graphene patterns

2011 ◽  
Vol 1365 ◽  
Author(s):  
J.B. Park ◽  
W. Xiong ◽  
Z.Q. Xie ◽  
M. Mitchell ◽  
Y. Gao ◽  
...  
Keyword(s):  
Single Layer ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Single Layer Graphene ◽  
Direct Writing ◽  
Optically Pumped ◽  
Scan Speed ◽  
Thin Nickel ◽  
532 Nm

ABSTRACTRapid growth of single-layer graphene using laser-induced chemical vapor deposition (LCVD) with a visible CW laser (λ = 532 nm) irradiation at room temperature was investigated. In this study, an optically-pumped solid-state laser with a wavelength of 532 nm irradiates a thin nickel foil to induce a local temperature rise, thereby allowing the direct writing of graphene patterns about ~10 μm in width with high growth rate on precisely controlled positions. It is demonstrated that the fabrication of graphene patterns can be achieved with a single scan for each graphene pattern using LCVD with no annealing or preprocessing of the substrate. The scan speed reaches to about ~50 um/s, which indicates that the graphene pattern with 1:1 aspect ratio (x:y) can be grown in 0.2 sec. The patterned graphene on nickel was transferred to SiO2/Si substrate for fabrication of electrical circuits and sensor devices.

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