Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon

2007 ◽  
Author(s):  
Chun-Hyung Cho ◽  
Richard C. Jaeger ◽  
Jeffrey C. Suhling ◽  
M. Kaysar Rahim
Keyword(s):  
Pressure Coefficient ◽  
Experimental Methods ◽  
Temperature Dependent ◽  
Pressure Coefficients ◽  
Stress Sensors ◽  
Wide Range ◽  
Complete Set ◽  
Stress Sensing ◽  
Test Chips ◽  
P Type

Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricated on the (100) silicon. However, complete calibration of the three independent piezoresistive coefficients is more difficult and one approach utilizes hydrostatic measurement of the silicon “pressure” coefficients. We are interested in stress measurements over a very broad range of temperatures, and this paper present the experimental methods and results for hydrostatic measurements of the pressure coefficient of both n- and p-type silicon over a wide range of temperatures and then uses the results to provide a complete set of temperature dependent piezoresisitive coefficients for the (111) silicon.

Characterization of the Piezoresistive Coefficients of (100) Silicon From −150 to +125C

2007 ◽  
Author(s):  
Chun-Hyung Cho ◽  
Richard C. Jaeger ◽  
Jeffrey C. Suhling
Keyword(s):  
Integrated Circuit ◽  
Carrier Mobility ◽  
Limited Data ◽  
Experimental Calibration ◽  
Four Point Bending ◽  
Stress Sensors ◽  
Stress Sensing ◽  
Test Chips ◽  
Crystallographic Axes

Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. The test chips incorporate resistor or transistor sensing elements that are able to measure stresses by observing the changes in their resistivity or carrier mobility. This piezoresistive behavior of such sensors is characterized by three piezoresistive coefficients, which are electro-mechanical material constants. We are interested in stress characterization over a very broad range of temperatures. However, the literature provides limited data over the desired range, and even the data at room temperature, exhibit wide discrepancies in magnitude as well as sign. This work focuses on an extensive experimental study of the temperature dependence of the piezoresistive coefficients, π11, π12, and π44, for both p- and n-type silicon. In order to minimize errors associated with misalignment with the crystallographic axes on (100) silicon wafers, anisotropic wet etching was used in this work to accurately locate the axes. A special four-point bending apparatus has been constructed and integrated into an environmental chamber capable of temperatures from −155 to +300°C. Experimental calibration results for the piezoresistive coefficients as a function of temperature from −150°C to +125°C are presented and compared and contrasted with existing values from literature. Measurements were performed using stress sensors fabricated on (100) silicon mounted on PCB material including both die-on-beam and strip-on-beam mounting techniques. Four-point bending (4PB) was used to generate the required stress, and finite element simulations have been used to determine the actual states of stress in the silicon material.

On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging

2000 ◽  
Vol 124 (1) ◽  
pp. 22-26 ◽  
Author(s):  
Ben-Je Lwo ◽  
Ching-Hsing Kao ◽  
Tung-Sheng Chen ◽  
Yao-Shing Chen
Keyword(s):  
Input Power ◽  
Microelectronic Packaging ◽  
Piezoresistive Sensors ◽  
Four Point Bending ◽  
Stress Sensors ◽  
Linear Relationships ◽  
Study Test ◽  
As Stress ◽  
Test Chips ◽  
P Type

Stress measurements in microelectronic packaging through piezoresistive sensors take the advantage of both in-situ and nondestructive. In this study, test chips with both p-type and n-type piezoresistive stress sensors, as well as a heat source, were first designed, then manufactured by a commercialized foundry so that the uniformity of the test chips was expected. Both temperature and stress calibrations were next performed through a special designed MQFP (Metal Quad Flat Package) and four-point bending (4PB) structure, respectively. Measurements of stresses which are produced due to both manufacturing process and thermal effects on the test chips were finally executed, and approximately linear relationships were observed between stress and temperature as well as stress and input power. It is concluded that n-type piezoresistive stress sensors are able to extract stress in microelectronic packaging with good accuracy.

scholarly journals Prognosis of Wind-tempted Mean Pressure Coefficients of Cross-shaped Tall Buildings Using Artificial Neural Network

2020 ◽  
Author(s):  
Rajdip Paul ◽  
Sujit Kumar Dalui
Keyword(s):  
Mean Squared Error ◽  
Pressure Coefficient ◽  
Tall Buildings ◽  
Parametric Models ◽  
Wind Pressure ◽  
Pressure Coefficients ◽  
Building Models ◽  
Wide Range ◽  
Close Relationship ◽  
Artificial Neural

The present paper focuses on the study of wind-induced responses of cross-plan shaped tall buildings. Initially, three parametric building models are studied for the purpose with a constant plan area 22500 mm2. The length and velocity scales are taken as 1:300 and 1:5, respectively. Wind angle of attack (WAA) is considered from 0° to 330° with an increment of 30°. At first, the external surface pressure coefficients (Cp) at different faces of the models are carried out for different wind occurrence angles employing Computational Fluid Dynamics method of simulated wind flow. Again, Fast Fourier Transform (FFT) fitted expressions as the sine and cosine function of WAA are proposed for attaining mean wind pressure coefficient on the building faces. The accuracy of the Fourier series expansions is justified by presenting histograms of sum square error (SSE), R2 value and root mean square error (RMSE). The results are also compared by training Artificial Neural Networks (ANN). Training is continued till Regression (R) values are more than 0.99 and Mean Squared Error (MSE) tends to 0, ensuring a close relationship among the outputs and targets. The face-wise value of (Cp) obtained using all three methods, are plotted. The error histograms of the ANN models show that the fitting data errors are spread within a reasonably good range. It is observed that the deviation in the result is not more than 5% in any case. Finally, the ANN predictions are presented for nine parametric models to cover a wide range of possible cross-shaped buildings.

scholarly journals Probability Characteristics, Area Reduction, and Wind Directionality Effects of Extreme Pressure Coefficients of High-Rise Buildings

2021 ◽  
Vol 11 (15) ◽  
pp. 7121
Author(s):  
Shouke Li ◽  
Feipeng Xiao ◽  
Yunfeng Zou ◽  
Shouying Li ◽  
Shucheng Yang ◽  
...  
Keyword(s):  
Probability Distribution ◽  
Pressure Coefficient ◽  
Wind Pressure ◽  
Extreme Pressure ◽  
Distribution Law ◽  
Distribution Fitting ◽  
Pressure Coefficients ◽  
High Rise ◽  
Area Reduction ◽  
The Mean

Wind tunnel tests are carried out for the Commonwealth Advisory Aeronautical Research Council (CAARC) high-rise building with a scale of 1:400 in exposure categories D. The distribution law of extreme pressure coefficients under different conditions is studied. Probability distribution fitting is performed on the measured area-averaged extreme pressure coefficients. The general extreme value (GEV) distribution is preferred for probability distribution fitting of extreme pressure coefficients. From the comparison between the area-averaged coefficients and the value from GB50009-2012, it is indicated that the wind load coefficients from GB50009-2012 may be non-conservative for the CAARC building. The area reduction effect on the extreme wind pressure is smaller than that on the mean wind pressure from the code. The recommended formula of the area reduction factor for the extreme pressure coefficient is proposed in this study. It is found that the mean and the coefficient of variation (COV) for the directionality factors are 0.85 and 0.04, respectively, when the orientation of the building is given. If the uniform distribution is given for the building’s orientation, the mean value of the directionality factors is 0.88, which is close to the directionality factor of 0.90 given in the Chinese specifications.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

Hydrogenation of methylacetylene. III. The reaction of methylacetylene with hydrogen catalyzed by nickel, copper, and their alloys

1968 ◽  
Vol 46 (4) ◽  
pp. 623-633 ◽  
Author(s):  
R. S. Mann ◽  
K. C. Khulbe
Keyword(s):  
Activation Energy ◽  
Nickel Catalyst ◽  
Hydrogen Pressure ◽  
Constant Volume ◽  
Temperature Dependent ◽  
Nickel Copper ◽  
Wide Range ◽  
Initial Hydrogen Pressure

The reaction between methylacetylene and hydrogen over unsupported nickel, copper, and their alloys has been investigated in a static constant volume system between 20 and 220 °C for a wide range of reactant ratios. The order of reaction with respect to hydrogen was one and nearly independent of temperature. While the order of reaction with respect to methylacetylene over nickel catalyst was slightly negative and temperature dependent, it was always positive and nearly independent of temperature for copper and copper-rich alloys. Selectivity was independent of initial hydrogen pressure for nickel and copper only; for others it decreased rapidly with increasing hydrogen pressure. The overall activation energy varied between 9 and 21.2 kcal/g mole. Selectivity and extent of polymerization increased with increasing amount of copper in the alloy.

scholarly journals The diamagnetic susceptibilities of salts forming ions with inert gas configurations II-The alkaline halides

1935 ◽  
Vol 152 (876) ◽  
pp. 342-353 ◽  
Author(s):  
G. W. Brindley ◽  
F. E. Hoare ◽  
Richard Whiddington
Keyword(s):  
Crystalline State ◽  
Experimental Methods ◽  
Inert Gas ◽  
Complete Set ◽  
Sodium And Potassium ◽  
Potassium Halides

The data so far published on the diamagnetic susceptibilities of the alkaline halides, measured for the salts in the crystalline state, are very discordant and incomplete, as reference to Table I will show. The aim in carrying out these experiments has been twofold: firstly, to obtain a complete set of values for these salts and secondly to examine more closely than has hitherto been possible how rigorously the susceptibilities of simple crystalline salts are additive. It has already been established that the susceptibilities are approximately additive, but it has not been possible to test this with exactitude because of ( a ) the large discrepancies between the results obtained by previous observers, and ( b ) the lack of data for many crystals. The discrepancies may have arisen to some extent from the different experimental methods, some of which are more accurate than others and some of which may introduce errors peculiar to themselves. We have therefore made a complete re-determination of the susceptibilities of all the alkaline halides, using the same apparatus and method under the same conditions. Since any systematic experi-mental errors will affect all our results to approximately the same extent, we shall be in a stronger position for testing the additivity of the susceptibilities than if we rely partly on our own and partly on other observers’ results. Previous investigators have measured the susceptibilities of some compounds in the crystalline state and others in solution; the latter are of no help in connexion with our problem, for an examination of the available data suggests that solutions have susceptibilities higher by several per cent, than the corresponding crystals. We cannot, therefore, arrive at any certain conclusion by using results obtained partly for crystals and partly for solutions. 2—Method The method previously described has been used to obtain a complete set of values for the susceptibilities of the alkaline halides. Although slight modifications have been made from time to time, the apparatus has remained, in essentials, the same as when used for the measurement of the susceptibilities of the sodium and potassium halides.

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Mark S. Rodder ◽  
Dimitri A. Antoniadis
Keyword(s):  
Numerical Calculation ◽  
Polycrystalline Silicon ◽  
Amorphous Region ◽  
Defect States ◽  
Temperature Dependent ◽  
Step Process ◽  
Dependent Potential ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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