Failure Analysis of Contact Probe Pins for SnPb and Sn Applications

2007 ◽  
Author(s):  
Changsoo Jang ◽  
Seungbae Park ◽  
Bill Infantolino ◽  
Lawrence Lehman ◽  
Ryan Morgan ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Electrical Contact ◽  
Oxide Growth ◽  
Root Cause ◽  
Periodic Inspection ◽  
Contact Probe ◽  
Surface Oxides ◽  
Inspection Process

A failure mechanism of pogo-type probe pin is investigated. A probing tester with actuation capable in three-axes is used to simulate the actual inspection process experimentally. Force required to break in surface oxides and develop electrical contact is measured. Contact resistance history reveals that pins mating to Sn surfaces fail earlier than SnPb surfaces. Through periodic inspection of pin using microprobe/EDS as a function of probing count, the general root cause of pin failure is turned out to be pin tip wear out associated with Sn oxide growth on its surface. The cause of earlier failure of the pin probing matte Sn surface is identified as severe wear out by a rough and abrasive characteristic of matte Sn.

Failure mechanism in fiber-shaped electrodes for lithium-ion batteries

2015 ◽  
Vol 3 (20) ◽  
pp. 10942-10948 ◽  
Author(s):  
Wei Weng ◽  
Qingqing Wu ◽  
Qian Sun ◽  
Xin Fang ◽  
Guozhen Guan ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Failure Mechanism ◽  
Electrical Contact ◽  
Active Material ◽  
Lithium Ion ◽  
Current Collector ◽  
Conductive Network ◽  
Electrical Contact Resistance ◽  
Loss Of Contact ◽  
First Time

Failure mechanism is investigated for the first time in a Si-based fiber-shaped electrode. The interphase electrical contact resistance indicates the dominant failure mechanism, which is the loss of contact between the current collector/conductive network and the active material. The decreasing contact resistance denotes the loose interphase contact and a decreasing capacity.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Nanoprobing as an Essential and Fast Methodology in Identification of Failure’s Root Cause for Advanced Technology

2013 ◽  
Author(s):  
Yinzhe Ma ◽  
Chong Khiam Oh ◽  
Ohnmar Nyi ◽  
Chuan Zhang ◽  
Donald Nedeau ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Turnaround Time ◽  
Advanced Technology ◽  
Electrical Behavior ◽  
Root Cause ◽  
Front End

Abstract This paper highlights the use of nanoprobing as a crucial and fast methodology for failure analysis (FA) in sub 20nm with an improved semi-auto nanoprobing system. Nanoprobing has the capability to localize as well as characterize the electrical behavior of the malfunctioning device for a better understanding of the failure mechanism. It provides a valuable guide to choose a proper physical FA technique to identify the root cause of the failure. This established methodology helps to accelerate the FA turnaround time and improve the success rate. Its application to a few of the front end of line and one back end of line issues is highlighted in the paper.

Failure Analysis Methodology on Systematic Missing Cu in RAM Due to Cu CMP

2014 ◽  
Author(s):  
Ghim Boon Ang ◽  
Changqing Chen ◽  
Hui Peng Ng ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Removal Rate ◽  
Deep Dive ◽  
The Real ◽  
Root Cause ◽  
Analysis Methodology ◽  
Strong Emphasis ◽  
Cu Cmp

Abstract This paper places a strong emphasis on the importance of applying Systematic Problem Solving approach and use of appropriate FA methods and tools to understand the “real” failure root cause. A case of wafer center cluster RAM fail due to systematic missing Cu was studied. It was through a strong “inquisitive” mindset coupled with deep dive problem solving that lead to uncover the actual root cause of large Cu voids. The missing Cu was due to large Cu void induced by galvanic effects from the faster removal rate during Cu CMP and subsequently resulted in missing Cu. This highlights that the FA analyst’s mission is not simply to find defects but also play a catalyst role in root cause/failure mechanism understanding by providing supporting FA evidence (electrically/ physically) to Fab.

Humidity-Bias Driven Shorts in Multilayer Circuits: A Case Study in Failure Analysis

2000 ◽  
Author(s):  
Hei-Ruey Harry Jen ◽  
Gerald S. D’Urso ◽  
Harold Andrews
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Layer Structure ◽  
Molding Compound ◽  
Plastic Molding ◽  
Root Cause ◽  
Plastic Package ◽  
Processing Procedure ◽  
Failure Site

Abstract When a failure analysis (FA) involves a multiple layer structure separated by a polymeric material such as Benzocyclobutene (BCB), in a plastic package, it becomes a very challenging task to find out where the failure site is and how it failed. This is due to the fact that the chemical de-processing procedure removes BCB as well as the plastic molding compound. This paper outlines the studies carried out to determine the failure site and the root cause of the failure mechanism in a multilayer circuit and the steps taken to fix the problems. The methodology and results of this study are applicable to many other types of circuits.

Single Device Characterization by Nano-probing to Identify Failure Root Cause

2005 ◽  
Author(s):  
Chao-Chi Wu ◽  
Jon C. Lee ◽  
Jung-Hsiang Chuang ◽  
Tsung-Te Li
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Fault Isolation ◽  
Device Characterization ◽  
Nano Technology ◽  
Analysis Techniques ◽  
Root Cause ◽  
Visual Defects ◽  
Lower Success Rate

Abstract In general failure analysis cases, a less invasive fault isolation approach can be utilized to resolve a visual root cause defect. In the case of nano technology, visual defects are not readily resolved, due to an increase in non-visible defects. The nonvisible defects result in a lower success rate since conventional FA methods/tools are not efficient in identifying the failure root cause. For the advanced nanometer process, this phenomenon is becoming more common; therefore the utilization of advanced techniques are required to get more evidence to resolve the failure mechanism. The use of nanoprobe technology enables advanced device characterization h order to obtain more clues to the possible failure mechanism before utilizing the traditional physical failure analysis techniques.

Failure Analysis Methodology on Systematic Defect in ADC_PLL Ring Pattern Due to Plasma De-Chuck Process

2010 ◽  
Author(s):  
Ang Ghim Boon ◽  
Chen Changqing ◽  
Alfred Quah ◽  
Magdeliza ◽  
Indahwan Jony ◽  
...  
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Root Cause ◽  
Path Tracing ◽  
Analysis Methodology ◽  
Wafer Fab ◽  
Problem Solving Process

Abstract In this paper, a low yield case relating to a systematic array of failures in a ring pattern due to ADC_PLL failures on low yielding wafers will be studied. A systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current imaging, layout path tracing, PVC and XTEM together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical in a wafer foundry in which there is minimal available data on the test condition setup to duplicate the exact failure. The ring pattern was due to systematically open via as a result of polymer built-up from plasma de-chuck issue. It would serve as a good reference for a wafer Fab that encounters such an issue.

Failure Mechanism Studies and Root Cause Identification of Nonstick on Pad on Microchip Al Bondpads

2014 ◽  
Author(s):  
Hua Younan ◽  
Zhou Yongkai ◽  
Chen Yixin ◽  
Fu Chao ◽  
Li Xiaomin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Wafer Fabrication ◽  
Assembly Process ◽  
Root Cause ◽  
Barrier Metal ◽  
Root Cause Identification ◽  
Induced Defects

Abstract It is well-known that underetch material, contamination, particle, pinholes and corrosion-induced defects on microchip Al bondpads will cause non-stick on pads (NSOP) issues. In this paper, the authors will further study NSOP problem and introduce one more NSOP failure mechanism due to Cu diffusion caused by poor Ta barrier metal. Based on our failure analysis results, the NSOP issue was not due to the assembly process, but due to the wafer fabrication. The failure mechanism might be that the barrier metal Ta was with pinholes, which caused Cu diffused out to the top Al layer, and then formed the “Bump-like” Cu defects and resulted in NSOP on Al bondpads during assembly process.

A Logical Problem Solving Process for High Via Resistance Root Cause Analysis

2008 ◽  
Author(s):  
K. Li ◽  
P. Liu ◽  
J. Teong ◽  
M. Lee ◽  
H. L. Yap
Keyword(s):  
Problem Solving ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
High Resistance ◽  
Cause Analysis ◽  
Logical Problem ◽  
Root Cause ◽  
Analysis Process ◽  
Problem Solving Process

Abstract This paper presents a case study on via high resistance issue. A logical failure analysis process EDCA (Effect, Defect, Cause, and Action) is successfully applied to find out the failure mechanism, pinpoint the root cause and solve the problem. It sets up a very good example of how to do tough failure analysis in a controllable way.

Failure Analysis Case Study of Inductively Coupled Cross-Chip Signals

2016 ◽  
Author(s):  
Steven Loveless ◽  
Zhihong You ◽  
Tathagata Chatterjee ◽  
Badarish Subbannavar
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Individual Data ◽  
Cause Analysis ◽  
Inductively Coupled ◽  
Root Cause ◽  
Specific Device ◽  
Data Points ◽  
On Chip

Abstract This paper discusses a failure analysis case study in a highly integrated mixed signal device caused by inductive coupling of on-chip signals. The techniques utilized and the approach to root cause analysis are discussed in depth. The interactions between the device design and failure mechanism are identified in detail. Focus is placed on drawing conclusions from the sum of individual data points, and the discussion provides an analytical path by which similar failures can be isolated and specific device sensitivities can be identified.

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