Thermal Management for Chip-Scale Atomic Clocks

Author(s):  
Alexander Laws ◽  
Richard Y. J. Chang ◽  
Victor M. Bright ◽  
Y. C. Lee

Power dissipation of chip-scale atomic clocks is one of the major design considerations. The largest power dissipation is for temperature control of the vertical-cavity surface-emitting laser (VCSEL) and cesium vapor cell. For example, the temperature of the VCSEL and Cs cell have to both be at 70±0.1°C or there will be frequency shift which will ruin the lock of the clock. These temperatures have to be maintained even under a large temperature variation such as −40°C to 50°C. There are three major thermal designs to consider: a) micro-heaters to fine-tune the temperatures of VCSEL and Cs cell, b) use of waste heat from other units to heat the system when outside temperature is low, and c) use of a thermal switch to release any extra waste heat when ambient temperatures are high. These three thermal designs have been incorporated in to a thermal test vehicle, which will be used to develop a thermal management design for the clock. This paper describes the proposed clock design, creation of the thermal test vehicle and development of a bimetallic snap based thermal conduction switch. The switch has been demonstrated to change thermal resistance from 52.9±2.8 K/W when the switch is open to 19.5±1.1 K/W with the switch closed.

2019 ◽  
Vol 49 (2) ◽  
pp. 187-190 ◽  
Author(s):  
S A Blokhin ◽  
N A Maleev ◽  
M A Bobrov ◽  
A G Kuz'menkov ◽  
A P Vasil'ev ◽  
...  

2013 ◽  
Vol 22 (1) ◽  
pp. 014206 ◽  
Author(s):  
Guo-Zhu Shi ◽  
Bao-Lu Guan ◽  
Shuo Li ◽  
Qiang Wang ◽  
Guang-Di Shen

Author(s):  
A. D. Laws ◽  
Y. J. Chang ◽  
V. M. Bright ◽  
Y. C. Lee

We report the first use of a bimetallic buckling disk as a thermal conduction switch. The disk is used to passively alter the thermal resistance of the package of a chip scale atomic clock. A vertical-cavity surface-emitting laser (VCSEL) and a cesium vapor cell, contained in the clock, must be maintained at 70±0.1°C even under an ambient temperature variation of -40°C to 50°C. A thermal test vehicle has been developed to characterize a sample package with a thermal conduction switch and has been modeled using Finite Element Analysis (FEA). Three cases are presented for the temperature control of the test vehicle under different load placements and environmental conditions: 1) the center resistor in a vacuum package; 2) the center resistor packaged in air; and 3) the side resistor in a vacuum package. At 38°C, the switch snaps upward to reduce the thermal resistance. As a result, the heating power needed to maintain the same temperature is increased from 118 to 200 mW for Case 1. Such a significant change of the thermal resistance demonstrates the effectiveness of the novel thermal switch. However, the switch becomes less effective with air filling the gap, as in Case 2. More interestingly, the switch is not effective at all if the side resistor's temperature is to be controlled as in Case 3.


2009 ◽  
Vol 45 (4) ◽  
pp. 361-366
Author(s):  
I. A. Derebezov ◽  
V. A. Haisler ◽  
A. K. Bakarov ◽  
A. K. Kalagin ◽  
A. I. Toropov ◽  
...  

2011 ◽  
Vol 19 (3) ◽  
Author(s):  
Ł. Piskorski ◽  
R. Sarzała ◽  
W. Nakwaski

AbstractContinuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well (MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is investigated using our comprehensive self-consistent simulation model to suggest their optimal design for room and elevated temperatures. For increasing ambient temperatures, an increase in the VCSEL threshold current has happened to be mostly associated with the Auger recombination. Nevertheless, the InAsP/InGaAsP VCSELs have been found to exhibit encouraging thermal behaviour with the quite high value of maximal operating temperature of 350 K. It has been found that 5-μm devices seem to be the most optimal ones because they demonstrate both the room temperature (RT) threshold current equal to only 0.55 mA and maximum operating temperature equal to as much as 345 K. For these devices, the characteristic temperature T0 is equal to 92 K for 290–305 K, 51 K for 310–325 K and 29 K for 330–345 K. Therefore, the InAsP/InGaAsP VCSELs have been found to offer very promising performance both at room and elevated temperatures as sources of the carrier 1.3-μm wave in the fibre optical communication using silica fibres.


2016 ◽  
Vol 55 (31) ◽  
pp. 8839 ◽  
Author(s):  
Eric Kroemer ◽  
Jaroslaw Rutkowski ◽  
Vincent Maurice ◽  
Rémy Vicarini ◽  
Moustafa Abdel Hafiz ◽  
...  

2012 ◽  
Vol 101 (17) ◽  
pp. 171104 ◽  
Author(s):  
A. Al-Samaneh ◽  
M. Bou Sanayeh ◽  
M. J. Miah ◽  
W. Schwarz ◽  
D. Wahl ◽  
...  

2006 ◽  
Vol 53 (16-17) ◽  
pp. 2469-2484 ◽  
Author(s):  
Dmitry Strekalov ◽  
Andrey B. Matsko ◽  
Nan Yu ◽  
Anatoliy A. Savchenkov ◽  
Lute Maleki

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