Solution-Gated Ion-Sensitive Field Effect Transistor With Polymer Selective Membrane for Nitrate Detection

2018 ◽  
Author(s):  
Jungyoon Kim ◽  
Qingyuan Liu ◽  
Tianhong Cui
Keyword(s):  
Spin Coating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Sensor Response ◽  
Selective Detection ◽  
Coating Method ◽  
Selective Membrane ◽  
Chloride Sulfate ◽  
Effect Transistor

In the paper, we fabricated a solution-gated ion-sensitive field effect transistor (IS-FET) and synthesized a selective membrane for the selective detection of nitrate. For sensor response, the level of Dirac point is measured to check the amount of nitrate in the water. Nitrate selective membrane is coated on graphene using a spin-coating method. The IS-FET is tested with four different ion solutions including chloride, sulfate, phosphate and nitrate at four different concentrations (0.1, 1, 10, 100 ppm). The Dirac point shift from −0.56 V to −0.36 V as increasing the concentration. The detection limit is 0.1 ppm, and the response time is less than 1 min.

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Real-time and selective detection of nitrates in water using graphene-based field-effect transistor sensors

2018 ◽  
Vol 5 (8) ◽  
pp. 1990-1999 ◽  
Author(s):  
Xiaoyan Chen ◽  
Haihui Pu ◽  
Zipeng Fu ◽  
Xiaoyu Sui ◽  
Jingbo Chang ◽  
...  
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Selectivity ◽  
High Sensitivity ◽  
Selective Detection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Modified Graphene ◽  
Benzyltriethylammonium Chloride

A benzyltriethylammonium chloride-modified graphene field-effect transistor sensor has high sensitivity, high selectivity and rapid response for nitrate detection.

Microwave switching of graphene field effect transistor at and far from the Dirac point

2010 ◽  
Vol 96 (10) ◽  
pp. 103105 ◽  
Author(s):  
G. Deligeorgis ◽  
M. Dragoman ◽  
D. Neculoiu ◽  
D. Dragoman ◽  
G. Konstantinidis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Ion-selective membrane chemically bound to a field-effect transistor

1989 ◽  
Vol 17 (1-2) ◽  
pp. 209-215 ◽  
Author(s):  
M. Battilotti ◽  
R. Colilli ◽  
I. Giannini ◽  
M. Giongo
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Selective Membrane ◽  
Effect Transistor

scholarly journals Spin Speed and Duration Dependence of TiO2Thin Films pH Sensing Behavior

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Rohanieza Abdul Rahman ◽  
Khairul Aimi Yusof ◽  
Wan Fazlida Hanim Abdullah ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Spin Speed ◽  
Coating Method ◽  
Effect Transistor ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

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