Analytical Study of the Instability Between Two Liquids Flowing in a Channel and Subjected to Parallel or Normal Electric Field

2008 ◽  
Author(s):  
A. Kerem Uguz ◽  
Nadine Aubry
Keyword(s):  
Electric Field ◽  
Analytical Study ◽  
Microfluidic Devices ◽  
Maximum Growth ◽  
Drop Formation ◽  
Plane Poiseuille Flow ◽  
Flat Interface ◽  
Material Deposition ◽  
Normal Electric Field ◽  
Complete Set

The electro-hydrodynamic linear stability of a flat interface between two viscous, immiscible and incompressible liquids in plane Poiseuille flow has been shown to be useful in microfluidic devices. In some applications (e.g., material deposition) stability is desired, and in others (e.g., mixing or drop formation) instability needs to be induced. Depending on the direction of the electric field, i.e., parallel or normal to the flat interface, and in the case of fast electric times, it was shown analytically and without solving the complete set of equations that the electric field can either stabilize or destabilize the interface [1]. In this paper, we fully solve the equations and determine the maximum growth rates and the critical wavenumbers in the conductivity versus permittivity ratio space.

Linear growth of instabilities on a liquid metal under normal electric field

1993 ◽  
Vol 3 (8) ◽  
pp. 1201-1225 ◽  
Author(s):  
G. N�ron de Surgy ◽  
J.-P. Chabrerie ◽  
O. Denoux ◽  
J.-E. Wesfreid
Keyword(s):  
Liquid Metal ◽  
Electric Field ◽  
Linear Growth ◽  
Normal Electric Field

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Drop formation from an orifice in an electric field

AIChE Journal ◽  
1988 ◽  
Vol 34 (9) ◽  
pp. 1577-1580 ◽  
Author(s):  
C. H. Byers ◽  
J. J. Perona
Keyword(s):  
Electric Field ◽  
Drop Formation

Alignment of carbon nanotubes under the influences of nematic liquid crystals and electric fields — an analytical study

2021 ◽  
Author(s):  
Setia Budi Sumandra ◽  
Bhisma Mahendra ◽  
Fahrudin Nugroho ◽  
Yusril Yusuf
Keyword(s):  
Carbon Nanotubes ◽  
Free Energy ◽  
Electric Field ◽  
Electric Fields ◽  
Analytical Study ◽  
Free Energy Density ◽  
Diameter Ratio ◽  
Order Parameters ◽  
Anchoring Strength ◽  
Length To Diameter Ratio

Carbon nanotubes (CNTs) have benefits in various fields, they are disadvantageous due to their tendency to form aggregates and poorly controlled alignment of the CNT molecules (characterized by order parameters). These deficiencies can be overcome by dispersing the CNTs in nematic liquid crystal (LC) and placing the mixture under the influence of an electric field. In this study, Doi and Landau–de Gennes free energy density equations are used to analytically confirm that an electric field increases the order parameters of CNTs and LCs in a dispersion mixture. The anchoring strength of the nematic LC is also found to affect the order parameters of the CNTs and LC. Further, increasing the length-to-diameter ratio of the CNTs increases their alignment without affecting the LC alignment. These findings indicate that CNT molecular alignment can be controlled by adjusting the CNT length-to-diameter ratio, anchoring the LCs, and adjusting the electric field strength.

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